Product News: Electronic Components & Devices
GaN HEMTs target 1.2-1.4 GHz L-band radar systems.
Press Release Summary:
August 27, 2013 - Based on 50 V, 0.4µ GaN on SiC foundry process, Models CGHV14250and CGHV14500 optimize performance of band-specific applications ranging from UHF to 1,800 MHz. Model CGHV14250 features 330 W typical output power, 18 dB power gain, and 77% typical drain efficiency, while Model CGHV14500 provides 500 W typical output power, 17 dB power gain, and 70% typical drain efficiency. Available in ceramic/metal flange and pill packages, both transistors feature 0.3 dB pulsed amplitude droop.
Original Press Release
Cree Releases Two New GaN HEMTs for L-Band Radar Systems
Press release date: August 22, 2013
Based on Cree’s 50V 0.4µ GaN on SiC foundry process, Cree’s new GaN HEMTs for L-Band radar systems provide engineers with excellent power and small signal performance, are internally pre-matched on the input, and are available in ceramic/metal flange and pill packages that are much smaller than competing gallium arsenide (GaA) or silicon (Si) RF technology, enabling enhanced design flexibility.
The 250W CGHV14250 features 330W typical output power, 18dB power gain, and 77% typical drain efficiency. The 500W CGHV14500 features 500W typical output power, 17dB power gain, and 70% typical drain efficiency. Both the 250W and 500W GaN HEMTs feature 0.3dB pulsed amplitude droop.
To view a video demonstration of the CGHV14500, please visit: http://www.youtube.com/watch?v=1GFAxg7IfFM. To access datasheets for the new 250W and 500W GaN HEMTs, please visit: http://www.cree.com/~/media/Files/Cree/RF/Data%20Sheets/CGHV14250.pdf and http://www.cree.com/~/media/Files/Cree/RF/Data%20Sheets/CGHV14500.pdf. Large-scale models are available at Agilent ADS and AWR Microwave, and stock will be available at Digikey by September.
For additional information, please visit www.cree.com/rf or contact Sarah Miller, Marketing and Export, Cree RF Components, at email@example.com or 919-407-5302.