GaN HEMT Die operates up to 6 GHz.
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Press Release Summary:
Exhibiting 17 dB typical small signal gain at 6 GHz and 18 dB typical small signal gain at 4 GHz, in addition to 65% typical power added efficiency, 40 W Model CGHV60040D and 170 W Model CGHV60170D are designed for use in Class AB linear amplifiers suitable for linear, pulsed, and CW applications. Both 0.4 µm, 50 V devices are supplied in Gel-Pak® Vacuum Release™ trays that immobilize components to ensure damage-free transportation and storage.
Original Press Release:
Cree Introduces First from a New Family of 50V GaN HEMT Die
Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has developed a family of 50V discrete GaN high electron mobility transistor (HEMT) die for operation up to 6GHz. The new 40W CGHV60040D and 170W CGHV60170D represent the only 50V bare GaN HEMT die available on the market and are now available for purchase. A 50V, 20W die rated for up to 6GHz operation and a 50V, 320W die rated for 4GHz operation are scheduled for release by the end of this calendar year.
Cree's new 0.4um, 50V GaN HEMT die offer hybrid amplifier designers higher gain and efficiency while operating over a broad, instantaneous frequency bandwidth, providing a unique to alternative to silicon (Si) and gallium arsenide (GaAs) technologies. Exhibiting 17dB typical small signal gain at 6GHz and 18dB typical small signal gain at 4GHz, in addition to 65% typical power added efficiency, the new 50V, 40W, and 170W GaN HEMT die are designed for use in Class AB linear amplifiers suitable for linear, pulsed, and CW applications.
Cree's new family of 50V GaN HEMT die are supplied in Gel-Pak® Vacuum Release™ trays, a non-tacky membrane that immobilizes the components to ensure damage-free transportation and storage. The order multiple for the newly released products is 10 GaN HEMT die per Gel-Pak tray. For assembly information, please download the Eutectic Die Bond Procedure application note at http://www.cree.com/RF/Document-Library.
For more information about the new 50V, 40W CGHV60040D and 50V, 170W CGHV60170D GaN HEMT die, please visit http://www.cree.com/RF/Products/General-Purpose-Broadband-Die-50-V/Discrete-Bare-Die/CGHV60040D and http://www.cree.com/RF/Products/General-Purpose-Broadband-Die-50-V/Discrete-Bare-Die/CGHV60170D to access product datasheets. For further information, please visit www.cree.com/rf and the Cree RF YouTube video stream or contact Sarah Miller, Marketing, Cree RF Components, at sarah_miller@cree.com or 919-407-5302.
Cree® is a registered trademark of Cree, Inc. Gel-Pak® is a registered trademark, and Vacuum Release™ is a trademark of Delphon Industries, LLC.
