Product News: Electronic Components & Devices

Gallium Nitride Power Amplifiers feature 2 GHz-6 GHz operating frequency.

Press Release Summary:

Gallium Nitride Power Amplifiers feature 2 GHz-6 GHz operating frequency.

April 12, 2017 -

Available in HMC7885 and HMC7748 models, Gallium Nitride Power Amplifiers are suitable for test and measurement, communications, military/aerospace surveillance and radar applications. Housed in hermetic flange-mount package, HMC7885 provides 21 dB of small-signal gain and 45 dBm of saturated RF-output power and draws 2.2 A from 28-V dc supply. Offering 60dB of small-signal gain, HMC7748 draws 0.7A and up to 4A from 12 and 28-V supply respectively.

Original Press Release

Analog Devices Expands GaN Power Amplifier Portfolio with Two Broadband 6-GHz Modules

Press release date: April 6, 2017

Analog Devices, Inc. today announced a pair of high-performance gallium nitride (GaN) power amplifier (PA) modules which offer one of the highest power-density levels in their class, thus minimizing size and weight of the subsystem. The HMC7885 and HMC7748 broadband modules target applications operating between 2 GHz and 6 GHz, including test and measurement, communications, Traveling Wave Tube (TWT) replacement, military/aerospace surveillance and countermeasures, and radar. The fully integrated, all solid-state devices expand ADI's existing line of GaN-based PAs, and feature ease of use to accelerate prototyping and system design.

The HMC7885 is a 32-W, hermetically sealed, hybrid amplifier housed in a hermetic flange-mount package for high-reliability applications. This hybrid amplifier typically provides 21 dB of small-signal gain and 45 dBm of saturated RF-output power. The device draws 2.2 A of quiescent current from a 28-V dc supply. Both RF input and output are DC blocked and matched to 50 ohms for ease of use. An evaluation board is available with layout and bill of materials to facilitate design-in and user application.

The HMC7748 is a fully integrated multistage Power Amplifier Module which delivers 25 W of saturated output power, accepts inputs up to −8 dBm maximum, and provides small-signal gain of 60 dB. It includes bias sequencing and regulation, and is also internally matched to 50 ohms. This PA draws 0.7 A from a 12-V supply and up to 4 A from a 28-V supply. It includes an enable pin to provide shutdown capability so the amplifier can be turned on and off without cycling the power supplies.

These GaN power amplifiers provide significant advances in performance and packaging, for broadband, medium-power applications up to 6 GHz – all of which make for a critical combination with today's size, weight, and power (SWaP)

Product Availability and Packaging

Product                    Temperature Range         Full Production                         Packaging

HMC7885                −30⁰C to +60⁰C                   Now                    18-Lead Hermetic, Ceramic/Metal Multichip Module, 1" × 1.4" × 0.15"                                                                                                                        high (approx.)

HMC7748                −40°C to +70°C                  Now                    6-Lead Module with Connector Interface, 3.75" × 3" × 0.6" high (approx.)

About Analog Devices

Analog Devices is the leading global high-performance analog technology company dedicated to solving the toughest engineering challenges. We enable our customers to interpret the world around us by intelligently bridging the physical and digital with unmatched technologies that sense, measure, power, connect and interpret. Visit http://www.analog.com.

Contact:

Linda Kincaid 

Analog Devices, Inc.

linda.kincaid@analog.com