DDR SDRAMs extend battery life in portable devices.
Press Release Summary:
Offered in 8 x 9 mm, 60-ball and 8 x 13 mm, 90-ball FPBGA packages, AS4C Series CMOS Double Data Rate Synchronous DRAMs include 256 Mb, 512 Mb, 1 Gb, and 2 Gb models with power consumption ranging from 1.7–1.95 V. Mobile DDR devices offer clock rates of 166 and 200 MHz, and provide programmable read and write burst lengths of 2, 4, 8, or 16. RoHS-compliant units come in extended and industrial temperature ranges of -30 to +85°C and -40 to +85°C, respectively.
Original Press Release:
Alliance Memory Launches New Low-Power, High-Speed Mobile CMOS DDR SDRAMs With 256-Mb, 512-Mb, 1-Gb, and 2-Gb Densities
SAN CARLOS, Calif. – Alliance Memory today introduced a new line of high-speed mobile CMOS double data rate synchronous DRAMs (DDR SDRAM) designed to increase efficiency and extend battery life in compact portable devices. Featuring low power consumption from 1.7 V to 1.95 V and a number of power-saving features, the 256-Mb, 512-Mb, 1-Gb, and 2-Gb devices are offered in 8-mm by 9-mm 60-ball and 8-mm by 13-mm 90-ball FPBGA packages.
With each new product generation, designers of today's portable devices are tasked with providing more functionality in less space while using less power. To meet this demand, the devices released today feature auto temperature compensated self-refresh (ATCSR) to minimize power consumption at lower ambient temperatures. In addition, their partial array self-refresh (PASR) feature reduces power by only refreshing critical data, while a deep power down (DPD) mode provides an ultra-low power state when data retention isn't required.
As the number of mobile DDR SDRAM suppliers continues to decrease, Alliance Memory is offering designers a new source for the low power consumption they require. The company's AS4C16M16MD1, AS4C32M16MD1, AS4C16M32MD1, AS4C64M16MD1, AS4C32M32MD1, and AS4C64M32MD1 provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in high-bandwidth, high-performance memory system applications in portable consumer electronics, medical equipment, and networking devices.
With their double data rate architecture, the mobile DDR SDRAMs offer high-speed operation with clock rates of 166 MHz and 200 MHz. For optimal functionality in extreme environments, all devices are available in both extended (-30 °C to +85 °C) and industrial (-40 °C to +85 °C) temperature ranges. The mobile DDR SDRAMs offer fully synchronous operation and provide programmable read or write burst lengths of 2, 4, 8, or 16. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. RoHS-compliant, the devices are lead (Pb)- and halogen-free.
Device Specification Table:
Part number | Density | Configuration | Clock Rate | Package | Temp. Range |
AS4C16M16MD1-6BCN | 256M | 16M X 16 bit | 166 MHz | 60-ball FPBGA | -30 °C to +85 °C |
AS4C16M16MD1-6BIN | 256M | 16M X 16 bit  | 166 MHz | 60-ball FPBGA | -40 °C to +85 °C |
AS4C32M16MD1-5BCN | 512M | 32M x 16 bit | 200 MHz | 60-ball FPBGA | -30 °C to +85 °C |
AS4C32M16MD1-5BIN | 512M | 32M x 16 bit | 200 MHz | 60-ball FPBGA | -40 °C to +85 °C |
AS4C16M32MD1-5BCN | 512M | 16M x 32 bit | 200 MHz | 90-ball FPBGA | -30 °C to +85 °C |
AS4C16M32MD1-5BIN | 512M | 16M x 32 bit | 200 MHz | 90-ball FPBGA | -40 °C to +85 °C |
AS4C64M16MD1-6BCN | 1G  | 64M x 16 bit | 166 MHz | 60-ball FPBGA | -30 °C to +85 °C |
AS4C64M16MD1-6BIN | 1G | 64M x 16 bit | 166 MHz | 60-ball FPBGA | -40 °C to +85 °C |
AS4C32M32MD1-5BCN | 1G | 32M x 32 bit | 200 MHz | 90-ball FPBGA | -30 °C to +85 °C |
AS4C32M32MD1-5BIN | 1G  | 32M x 32 bit | 200 MHz | 90-ball FPBGA | -40 °C to +85 °C |
AS4C64M32MD1-5BCN | 2G | 64M x 32 bit | 200 MHz | 90-ball FPBGA | -30 °C to +85 °C |
AS4C64M32MD1-5BIN | 2G | 64M x 32 bit | 200 MHz | 90-ball FPBGA | -40 °C to +85 °C |
Samples of the new mobile DDR SDRAMs are available now, with lead times of six to eight weeks for production quantities. Pricing for U.S. delivery starts at $2.00 per piece in 1,000-piece quantities.
About Alliance Memory Inc.
Alliance Memory Inc. is a worldwide provider of legacy memory products for the communications, computing, industrial, and consumer markets. The company supports a full range of asynchronous and synchronous SRAMs, low-power SRAMs, ZMD low-power SRAMs, synchronous DRAMs (SDR) and double data rate synchronous DRAMs (DDR SDRAM). Alliance Memory is a privately held company with headquarters in San Carlos, California, and regional offices in France, the United Kingdom, Italy, Bulgaria, Sweden, and Asia. More information about Alliance Memory is available online at www.alliancememory.com.
