Compact Monolithic CMOS DDR3L SDRAM offers 8 Gb density.
Press Release Summary:
Supplied in 96-ball, 9 x 14 mm, lead (Pb)-free FBGA package, AS4C512M16D3L features 8 Gb density and is internally configured as eight banks of 512M x 16 bits. Transfer rates reach 1,600 Mbps/pin and clock rates reach 800 MHz. Operating from single +1.35 V power supply, memory offers fully synchronous operation and provides programmable read or write burst lengths of 4 or 8. Along with programmable mode register, features include auto precharge and refresh functions.
Original Press Release:
Alliance Memory Launches New Monolithic High-Speed, Low-Voltage CMOS DDR3L SDRAM with 8-Gb Density in 96-Ball FBGA Package
SAN CARLOS, Calif. — Alliance Memory today introduced a new monolithic high-speed, low-voltage CMOS double data rate 3 synchronous DRAM (DDR3L SDRAM) with an 8-Gb density in the 96-ball, 9-mm by 14-mm, lead (Pb)-free FBGA package. Featuring state-of-the art silicon provided by Micron Technology, Inc., the AS4C512M16D3L (512M x 16) offers a double data rate architecture for extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz.
With minimal die shrinks, the single-die 8-Gb DDR3L SDRAM released today provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions used in conjunction with newer-generation microprocessors for industrial, medical, networking, telecom, and aerospace applications — eliminating the need for costly redesigns and part requalification. This 8-Gb DDR3 is a logical choice for customers that require increased memory yet face board space constraints.
The AS4C512M16D3L operates from a single +1.35-V power supply and is available with a commercial temperature range of 0 °C to +95 °C (AS4C512M16D3L-12BCN) and an industrial temperature range of -40 °C to +95 °C (AS4C512M16D3L-12BIN). The device is internally configured as eight banks of 512M x 16 bits.
The DDR3L SDRAM offers fully synchronous operation and provides programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, and a programmable mode register allows the system to choose the most suitable modes to maximize performance.
Samples of the new AS4C512M16D3L are available now, with lead times of six to eight weeks for production quantities.
About Alliance Memory Inc.
Alliance Memory is a worldwide provider of legacy memory products for the communications, computing, consumer electronics, medical, automotive, and industrial markets. The company's product range includes a full range of asynchronous and synchronous SRAMs, low-power SRAMs, ZMD low-power SRAMs, 3.3 V synchronous DRAMs (SDR), mobile DDRs, and 2.5 V single (DDR1), 1.8 V double (DDR2), and 1.5 V & 1.35 V triple rate (DDR3) synchronous DRAMs. Depending on the family, these products are available with commercial, industrial, and automotive operating temperature ranges and with densities from 64K to 8G. Alliance Memory is a privately held company with headquarters in San Carlos, California, and regional offices in the United Kingdom, France, Italy, Sweden, China, and Southeast Asia. More information about Alliance Memory is available online at www.alliancememory.com.
Micron and the Micron orbit logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners.
Link to datasheet: http://www.alliancememory.com/datasheets/AS4C512M16D3L.asp (AS4C512M16D3L)
Link to product photo: https://www.flickr.com/photos/alliancememory/sets/72157653507544433
Agency Contact:
Bob Decker
Redpines
+1 415 409 0233
bob.decker@redpinesgroup.com
Website:
Alliance Memory:
Kim Bagby
CFO
+1 650 610 6800
kim@alliancememory.com
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