CMOS DDR SDRAMs offer densities up to 1 Gb.
Press Release Summary:
Operating from single +2.5-V (± 0.2 V) power supply, 256 Mb Model AS4C32M8D1, 512 Mb Model AS4C64M8D1, and 1 Gb Model AS4C64M16D1 are internally configured as 4 banks of 32M word x 8 bits, 64M word x 8 bits, and 64M word x 16 bits, respectively. Units feature clock rates of 200 MHz and 166 MHz and provide programmable read or write burst lengths of 2, 4, or 8. Lead-free and halogen-free, products come in commercial temperature range of 0–70°C and industrial range of -40 to +85°C.
Original Press Release:
Alliance Memory Introduces New High-Speed CMOS DDR SDRAMs with 256 Mb, 512 Mb, and 1 Gb Densities in 60-Ball TFBGA and 66-Pin TSOP II Packages
SAN CARLOS, Calif. —Â Alliance Memory today introduced new high-speed CMOS double data rate synchronous DRAMs (DDR SDRAM) with densities of 256 Mb (AS4C32M8D1), 512 Mb (AS4C64M8D1), and 1 Gb (AS4C64M16D1) in the 60-ball 8-mm by 13-mm by 1.2 mm TFBGA package and the 66-pin TSOP II package with a 0.65-mm pin pitch.
The devices released today provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, medical, communications, and telecom products requiring high memory bandwidth, and they are particularly well-suited to high performance in PC applications. The AS4C32M8D1, AS4C64M8D1, and AS4C64M16D1 are internally configured as four banks of 32M word x 8 bits, 64M word x 8 bits, and 64M word x 16 bits, respectively. The DDR SDRAMs offer a synchronous interface, operate from a single +2.5-V (± 0.2 V) power supply, and are lead (Pb)- and halogen-free.
The AS4C32M8D1, AS4C64M8D1, and AS4C64M16D1 feature fast clock rates of 200 MHz and 166 MHz and are offered in commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) temperature ranges. The DDR SDRAMs provide programmable read or write burst lengths of 2, 4, or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.
With the addition of the AS4C32M8D1, AS4C64M8D1, and AS4C64M16D1 to its portfolio, Alliance Memory now offers the most extensive lineup of DDR SDRAMs in the industry, featuring densities of 64 Mb, 128 Mb, 256 Mb, 512 Mb, and 1 Gb. For Alliance Memory's customers, the devices eliminate costly redesigns by providing long-term support for end-of-life (EOL) components. In addition, the company doesn't perform die shrinks, which frees up engineering resources.
Link to Device Specification Table:
www.redpinesgroup.com/Alliance/150402Chart.htm
Samples and production quantities of the new DDR SDRAMs are available now, with lead times of six to eight weeks for large orders. Pricing for U.S. delivery only starts at $1 per piece.
About Alliance Memory Inc.
Alliance Memory is a worldwide provider of legacy memory products for the communications, computing, consumer electronics, medical, automotive, and industrial markets. The company's product range includes a full range of asynchronous and synchronous SRAMs, low-power SRAMs, ZMD low-power SRAMs, 3.3 V synchronous DRAMs (SDR), mobile DDRs, and 2.5 V single (DDR1), 1.8 V double (DDR2), and 1.5 V & 1.35 V triple rate (DDR3) synchronous DRAMs. Depending on the family, these products are available with commercial, industrial, and automotive operating temperature ranges and with densities from 64K to 4G. Alliance Memory is a privately held company with headquarters in San Carlos, California, and regional offices in the United Kingdom, France, Italy, Sweden, Bulgaria, China, and Southeast Asia. More information about Alliance Memory is available online at www.alliancememory.com.
