Product News: Electronic Components & Devices
Automotive Power MOSFETs offer RDS(on) down to 8.9 mOhm.
Press Release Summary:
March 6, 2014 - With continuous drain currents to 50 A, 100 V n-channel SQJ402EP, SQJ488EP, and SQD50N10-8m9L are optimized for injector boost applications in automotive engine control units. Model SQD50N10-8m9L in DPAK package provides on-resistance down to 8.9 mΩ at 10 V, whileÂ Models SQJ402EP and SQJ488EP, housed in 5 x 6 mm PowerPAK SO-8L package, offer values down to 11 mΩ and 21 mΩ at 10 V,Â respectively. All AEC-Q101-qualifed TrenchFETÂ® power MOSFETs with ThunderFETÂ® technology operate from -55 to +175Â°C.
Original Press Release
Vishay Intertechnology Releases First AEC-Q101-Qualified MOSFETs to Feature ThunderFET® Technology
Press release date: March 4, 2014
MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today released the first AEC-Q101-qualified TrenchFET® power MOSFETs to feature ThunderFET® technology. To increase efficiency and save space in automotive applications, the Vishay Siliconix 100 V n-channel SQJ402EP, SQJ488EP, and SQD50N10-8m9L offer some of the lowest on-resistance values available in the PowerPAK® SO-8L and DPAK packages.
Vishay's ThunderFET technology enables lower on-resistance per die area. In applications where lower on-resistance is crucial, this allows the SQD50N10-8m9L in the DPAK package to provide exceptionally low values down to 8.9 mΩ at 10 V. When space is at a premium, the SQJ402EP and SQJ488EP offer comparable values down to 11 mΩ at 10 V in the compact 5 mm by 6 mm PowerPAK SO-8L package, which is half the size of the DPAK.
With continuous drain currents to 50 A, the MOSFETs released today are optimized for injector boost applications in automotive engine control units and flyback converters for lighting ballasts in lighting control units. With low gate charge down to 18 nC, the devices provide low on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs in DC/DC converter applications — to reduce switching losses and improve total system efficiency.
The SQJ402EP, SQJ488EP, and SQD50N10-8m9L are 100 % Rg- and UIS-tested, halogen-free according to the JEDEC JS709A definition, and compliant to RoHS Directive 2011/65/EU. The devices operate over a temperature range of -55 °C to +175 °C.
Device Specification Table:
|Package||DPAK (TO-252)||PowerPAK SO-8L||PowerPAK SO-8L|
|RDS(on) (mΩ) @||10 V||8.9||11||21|
The SQJ402EP, SQJ488EP, and SQD50N10-8m9L join Vishay's previously released SQ Rugged Series of AEC-Q101-qualified MOSFETs. More information on the full range of SQ Series devices is available at http://www.vishay.com/mosfets/automotive-mosfets/.
Samples and production quantities of the new automotive MOSFETs are available now, with lead times of 16 weeks for large orders. Pricing for U.S. delivery in 100,000-piece quantities starts at $0.29 per piece.
Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.
TrenchFET, PowerPAK, and ThunderFET are registered trademarks of Siliconix incorporated.