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Two-in-One IGBT Module optimizes parallel connections.

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January 3, 2011 - Supplied in 172 x 89 x 38 mm or 250 x 89 x 38 mm package, High-Power 2-in-1 IGBT Module series feature V-IGBT chip that minimizes power loss and are manufactured with ultrasonic bonding technology that promotes reliability in heat cycle. Each RoHS-compatible model is designed to realize low inductance and current balance of parallel-connected semiconductors. Models with 1,200 V rating offer choice of 600, 900, or 1,400 A, while 1,700 V models offer 650 and 1,000 A options.

(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)
Original Press release

Fuji Electric Corp. Of America
Park 80 West, Plaza Two
Saddle Brook, NJ, 07663
USA



Fuji Electric Launches New High-Power 2-in-1 IGBT Module Series; Designed for Parallel Connections


Tokyo - Fuji Electric Holdings Co., Ltd., announces that its core operating company, Fuji Electric Systems Co., Ltd., will release the New High-Power 2-in-1 IGBT Module series of high-capacity, low-power-loss Insulated Gate Bipolar Transistor (IGBT) modules designed for parallel connections. Sales will commence from January 2011.

In line with the spread of power generation from natural energy sources such as solar and wind, such power generation facilities are continuing to expand in scale. Accordingly, demand is growing for high-capacity power semiconductors used in these power conversion systems.

The models in the New High-Power 2-in-1 IGBT Module series are suitable for higher power capacity in comparison with conventional 2-in-1 IGBT modules, as they have been designed to realize low inductance and current balance of parallel-connected semiconductors to optimize parallel connections.

1. Features

- Suitable for high power capacity through a design that realizes low inductance and optimal current balance of parallel-connected semiconductors
- Equipped with a sixth generation V-IGBT chip to achieve low power loss
- A high degree of reliability in the heat cycle is ensured through the application of powerful ultrasonic bonding technology
- Compatible with Restriction of the use of certain Hazardous Substances (RoHS) standards

2. Outline of specifications

----------------------------------------------------------------------
Product model Package dimensions Voltage rating Current rating
(millimeters) (volts) (amps)
----------------------------------------------------------------------
2MBI600VXA-120E-50 172 x 89 x 38 1,200 600
2MBI900VXA-120P-50 900
2MBI1400VXB-120P-50 250 x 89 x 38 1,400
----------------------------------------------------------------------
2MBI650VXA-170E-50 172 x 89 x 38 1,700 650
2MBI1000VXB-170E-50 250 x 89 x 38 1,000
----------------------------------------------------------------------

3. Primary applications

The series is designed for use at electrical power conversion facilities such as wind turbine and solar power systems, as well as in high-voltage inverters and high-capacity inverters.

4. Sales release
January 2011

About Fuji Electric Holdings

The Fuji Electric Group (TSE:6504) delivers maximum customer satisfaction as everything it stands for. It constantly strives to create innovative technologies that truly energize our customers' businesses. This approach is ingrained in the corporate DNA, which has been passed down unbroken as the driving force for more than 80 years. Driven by this powerful DNA, the Group's 25,000 personnel are motivated to deliver the products, services and solutions that win the support of customers wherever it operates. For more information, please visit www.fujielectric.com.

Contact:
Media Inquiries:
Fuji Electric Holdings Co., Ltd.
yamashita-takanori@fujielectric.co.jp

Customer Inquiries:
Power Module Department
Semiconductor Division
Semiconductor Group
Fuji Electric Systems Co., Ltd.
Telephone: +81-263-26-2513
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