TrenchFET® Power MOSFET features backside insulation.February 3, 2009 -
Supplied in chipscale MICRO FOOT® package, Si8422DB has 2-mil backside coating that insulates top of 1.55 x 1.55 x 0.64 mm package to electrical shorts created by temporary contact with moving parts in applications with thin height requirements. This 20 V, n-channel MOSFET can be placed where other items may be directly above it and is optimized for power amplifier, battery, and load switching in portable devices such as cell phones, PDAs, digital cameras, and smart phones.
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Original Press release
Vishay Intertechnology, Inc.
63 Lincoln Hwy., P.O. Box 4004
Malvern, PA, 19355 2143
USA
Vishay Releases Industry's First TrenchFET® Power MOSFET in MICRO FOOT® Chipscale Package to Feature Backside Insulation
MALVERN, PENNSYLVANIA - Jan. 21, 2009 - Vishay Intertechnology, Inc. (NYSE: VSH) today released the industry's first TrenchFET® power MOSFET in the chipscale MICRO FOOT® package to feature backside insulation.
The Si8422DB is optimized for power amplifier, battery, and load switching in portable devices such as cell phones, PDAs, digital cameras, MP3 players, and smart phones. The 2-mil backside coating of the device insulates the top of the MICRO FOOT package to electrical shorts from being created by temporary contact with moving parts in portable devices.
This insulation allows the device to be used in applications with very thin height requirements, providing designers with the flexibility to place the MOSFET where other items may be directly above it, such as shielding, buttons, or touch screens, which further compress the product height when depressed. This layout flexibility also translates into reduced parasitics, as the traces can be better optimized by not having to be routed to areas on the PCB with less height restrictions.
The 20-V n-channel Si8422DB features an ultra-compact 1.55-mm by 1.55-mm footprint with a slim 0.64-mm profile. The device offers a low on-resistance range from 0.043 W at 1.8-V VGS to 0.037 at 4.5-V VGS, with a maximum gate-source voltage of ±8 V.
Samples and production quantities of the new Si8422DB are available now, with lead times of 10 to 12 weeks for larger orders.
Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, transistors, and optoelectronics and selected ICs) and passive electronic components (resistors, capacitors, inductors, sensors, and transducers). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Its product innovations, successful acquisition strategy, and ability to provide "one-stop shop" service have made Vishay a global industry leader. Vishay can be found on the Internet at http://www.vishay.com.
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