Silicon Carbide Diodes feature 5-10 A current rating.
June 25, 2012 -
Housed in 9.8 x 6.6 x 2.29 mm two-lead DPAK package, 1,200 V/10 A Series SDB10S120 is intended for power management and conversion applications in harsh environments. Units feature positive temperature coefficient for paralleling, and temperature-independent switching behavior. Operating at temperatures up to 175°C, devices exhibit zero forward and reverse recovery current, with total capacitive charge of 40 nC.
|Original Press release |
SemiSouth Laboratories, Inc.
201 Research Blvd.
Starkville, MS, 39759
SemiSouth Doubles Current Rating of New SiC Diodes in DPAK Package to 10A
SDB10S120 1200V/10A diodes now in TO-252
SemiSouth Laboratories, Inc., the leading manufacturer of silicon carbide (SiC) transistor technology for high-power, high-efficiency, harsh-environment power management and conversion applications, has doubled the current rating of its DPAK-packaged silicon carbide diodes from 5A to 10A.
The 1200V/10A SDB10S120 features a positive temperature coefficient for ease of paralleling, and temperature-independent switching behavior. Maximum operating temperature is 175degC. Devices also exhibit zero forward and reverse recovery current. Total capacitive charge is 40nC. The true two lead DPAK (TO-252-2L) package has a mounted footprint (nominal) of 9.8x6.6mm and measures just 2.29mm high.
Explains SemiSouth's Senior Vice President of Sales & Marketing, Dieter Liesabeths: "By again extending our leadership position in silicon carbide with these new 1200V/10A diodes we are enabling manufacturers of products such as solar inverters, SMPS, induction heaters, UPS and motor drives - and well as anyone building PFC circuits - to benefit from increased performance and reduced space."
Samples are available now with volume production starting in June 2012. Devices are priced at $8.66 in 1000 piece quantities.
About SemiSouth Laboratories, Inc.
SemiSouth, a privately owned corporation with its main offices and foundry in Starkville, Mississippi, (USA), focuses on silicon carbide (SiC) power devices and electronics, targeting applications such as: solar inverters; power conversion in computing and network power supplies; variable-speed drives for industrial motors and hybrid electric vehicles; and products used in high-power, harsh-environment military and aerospace environments. The company was formed in 2000, has sold products globally through direct sales or distributors since 2005, and received a major growth investment from Power Integrations (NASDAQ: POWI) in 2010. It introduced the world's first commercial, cost-effective normally-off SiC JFETs in 2008, which have enabled world-record energy efficiencies for its customer's products. More information is available at www.semisouth.com.
For further information:
Brenda Temple, Director of Inside Sales and Contracts
SemiSouth Laboratories, Inc.
Tel: +1 (662) 324 7607 ext. 29