Silicon Carbide Diodes feature 5-10 A current rating.
June 25, 2012 -
Housed in 9.8 x 6.6 x 2.29 mm two-lead DPAK package, 1,200 V/10 A Series SDB10S120 is intended for power management and conversion applications in harsh environments. Units feature positive temperature coefficient for paralleling, and temperature-independent switching behavior. Operating at temperatures up to 175°C, devices exhibit zero forward and reverse recovery current, with total capacitive charge of 40 nC.
Original Press release
SemiSouth Laboratories, Inc.
201 Research Blvd.
Starkville, MS, 39759
USA
SemiSouth Doubles Current Rating of New SiC Diodes in DPAK Package to 10A
SDB10S120 1200V/10A diodes now in TO-252
SemiSouth Laboratories, Inc., the leading manufacturer of silicon carbide (SiC) transistor technology for high-power, high-efficiency, harsh-environment power management and conversion applications, has doubled the current rating of its DPAK-packaged silicon carbide diodes from 5A to 10A.
The 1200V/10A SDB10S120 features a positive temperature coefficient for ease of paralleling, and temperature-independent switching behavior. Maximum operating temperature is 175degC. Devices also exhibit zero forward and reverse recovery current. Total capacitive charge is 40nC. The true two lead DPAK (TO-252-2L) package has a mounted footprint (nominal) of 9.8x6.6mm and measures just 2.29mm high.
Explains SemiSouth's Senior Vice President of Sales & Marketing, Dieter Liesabeths: "By again extending our leadership position in silicon carbide with these new 1200V/10A diodes we are enabling manufacturers of products such as solar inverters, SMPS, induction heaters, UPS and motor drives - and well as anyone building PFC circuits - to benefit from increased performance and reduced space."
Samples are available now with volume production starting in June 2012. Devices are priced at $8.66 in 1000 piece quantities.
About SemiSouth Laboratories, Inc.
SemiSouth, a privately owned corporation with its main offices and foundry in Starkville, Mississippi, (USA), focuses on silicon carbide (SiC) power devices and electronics, targeting applications such as: solar inverters; power conversion in computing and network power supplies; variable-speed drives for industrial motors and hybrid electric vehicles; and products used in high-power, harsh-environment military and aerospace environments. The company was formed in 2000, has sold products globally through direct sales or distributors since 2005, and received a major growth investment from Power Integrations (NASDAQ: POWI) in 2010. It introduced the world's first commercial, cost-effective normally-off SiC JFETs in 2008, which have enabled world-record energy efficiencies for its customer's products. More information is available at www.semisouth.com.
For further information:
Brenda Temple, Director of Inside Sales and Contracts
SemiSouth Laboratories, Inc.
Tel: +1 (662) 324 7607 ext. 29
E-mail: brenda.temple@semisouth.com
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