SiC Schottky Diode is rated for 5 A and 1,200 V.
March 3, 2011 -
Housed in surface mount TO-252 D-Pak with approximate board mounted dimensions of 6.6 x 9.9 x 2.3 mm, Model C2D05120E enables design of solar power micro-inverters. Silicon carbide unit features zero reverse recovery current, zero forward recovery voltage, and temperature-independent switching behavior. With operating junction and storage temperature of -55 to +175°C, diode is also suited for switch mode power supplies, motor drives, and high-voltage multipliers.
(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)
|Original Press release |
4600 Silicon Dr
Durham, NC, 27703
Cree Launches Industry's First Surface Mount 1200V Silicon Carbide Schottky Diode
Surface mount TO-252 D-Pak device can enable smaller, lower cost, and more efficient solar power micro-inverters
DURHAM, N.C., -- Cree, Inc. (Nasdaq: CREE), a market leader in silicon carbide (SiC) power devices, announces the availability of the industry's first commercial 1200V surface mount SiC Schottky diode. Packaged in an industry-standard surface mount TO-252 D-Pak, the Schottky diodes deliver the same proven performance as Cree's TO-220 through-hole devices, with a smaller board footprint and lower profile. This can enable the design of smaller, lower cost, and more efficient solar power micro-inverters, compared to systems designed with larger and bulkier through-hole parts.
"Our customers designing high-efficiency micro-inverters for solar power applications wanted to simplify their designs without compromising system efficiency. They were looking for a surface mount device that could deliver the same performance they had come to expect from SiC Schottky diodes - zero reverse recovery losses, high frequency operation with a low EMI signature, and reduced operating temperatures," explained Cengiz Balkas, Cree vice president and general manager, Power and RF. "Given Cree's experience in developing high-voltage SiC power devices, the move to the surface mount D-Pak was a natural extension of our Schottky diode product line to serve this critical market."
"Design trends in solar power micro-inverters are requiring the use of surface mount components with smaller footprints and lower profiles," said Alessandro Di Nicco, design engineer new platforms, Power-One. "This enables us to both reduce the size of the inverter circuitry and lower the cost, while maintaining reliability and high efficiency, with the eventual goal of physically integrating the micro-inverter into the solar panels themselves. Cree's new surface mount Schottky diodes represent a significant step in that development."
Cree C2D05120E Schottky diodes are rated for 5A and 1200V, with approximate board mounted dimensions of 6.6mm wide x 9.9mm long x 2.3mm high. Operating junction and storage temperature is rated for -55°C to +175°C.
The C2D05120E surface mount Schottky diodes are fully qualified and released for production use. For samples and more information about Cree's SiC power devices, please visit www.cree.com/power.
Cree is a market-leading innovator of semiconductor solutions for wireless and power applications, lighting-class LEDs, and LED lighting solutions.
Cree's product families include power-switching devices, radio-frequency/wireless devices, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, and LED fixtures and bulbs. Cree solutions are driving improvements in applications such as variable-speed motors, wireless communications, general illumination, backlighting and electronic signs and signals.
For additional product and company information, please refer to www.cree.com.
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