SiC Power MOSFETs feature no tail current.
September 27, 2013 -
Rated at 80 mΩ and 1,200 V, Models SCT2080KE and SCH2080KE are intended for solar inverters, DC-DC converters, UPS, and motor drive applications. Absence of tail current and fast recovery characteristics lower switching losses, while 70–90 ns turn ON/OFF times allow for switching frequencies in hundreds of kHz range. Model SCH2080KE, co-packaged with discrete anti-parallel SiC Schottky Barrier Diode, features forward voltage 3 times smaller than that of body diode.
|Original Press Release |
ROHM Semiconductor USA, LLC
10145 Pacific Heights Blvd., Suite 1000
San Diego, CA, 92121
ROHM Semiconductor's 1200V SiC MOSFETs Deliver Cost-Effective, Breakthrough Performance
New SiC MOSFETs provide higher efficiency, power density and lower system BOM for power conversion systems
SANTA CLARA, Calif., -- ROHM Semiconductor today announced the release of two new 80-milliohm 1200V SiC (Silicon Carbide) MOSFETs, designated SCT2080KE and SCH2080KE, that are designed to deliver cost-effective, breakthrough performance. The SCH2080KE is the industry's first SiC MOSFET co-packaged with a discrete anti-parallel SiC Schottky Barrier Diode (SBD), and features a forward voltage three times smaller than that of the body diode. The combination of excellent switching performance, low on resistance, and high breakdown voltage make these devices ideal replacements for silicon power MOSFETs and IGBTs in solar inverter, DC-DC converter, UPS and motor drive applications.
ROHM SiC MOSFETs offer as much as 90% lower switching loss compared to silicon devices thanks to the absence of tail current and the diode's fast recovery performance. This allows designers to increase switching frequency to reduce size, cost, and weight of passives. Furthermore, these benefits enable the design of higher efficiency systems by implementing simpler, less expensive cooling systems.
"ROHM's SiC MOSFETs help customers save board space, simplify layout, and reduce BOM costs," said David Doan, Senior Product Marketing Manager at ROHM Semiconductor. "Importantly, ROHM's SiC MOSFETs are free from issues related to gate oxide breakdown, Vth stability, and degradation of the body diode during reverse conduction."
The SCT2080KE and SCH2080KE MOSFETs are available now in mass production quantities. ROHM Semiconductor has plans to expand its SiC MOSFET product line with lower on resistance and higher breakdown voltage models.
For more information on ROHM's SCT2080KE and SCH2080KE SiC MOSFETs, please go to: http://www.rohm.com/web/global/sic-mosfet
About ROHM Semiconductor
ROHM Semiconductor is an industry leader in system LSI, discrete components and module products. ROHM's proprietary production system, which includes some of the most advanced automation technology, is a major factor in keeping it at the forefront of the electronic component manufacturing industry. In addition to its development of electronic components, ROHM has also developed its own production system so that it can focus on specific aspects of customized product development.