Product News: Electronic Components & Devices

SiC MOSFETs suit high-voltage industrial applications.

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Press Release Summary:

May 29, 2014 - Designed for high-power industrial applications where efficiency is critical, 1,200 V Silicon Carbide MOSFETs are suited for solar inverters, electric vehicles, welding, and medical devices. Units are rated at 80 mΩ and 50 mΩ and provide development flexibility by offering both industry standard TO-247 and SOT-227 packages. In addition to optimized short circuit withstand, devices feature ultra-low gate resistance for minimizing switching energy loss.

Microsemi Corporation

2381 Morse Ave., Irvine, CA, 92614, USA

Original Press Release

Microsemi Continues Its Leadership in Silicon Carbide Solutions by Launching Innovative New Family of SiC MOSFETs for High-voltage Industrial Applications

Press release date: May 20, 2014

New SiC MOSFETs Complemented with SiC Power Modules, Significantly Improving System Efficiency in High-voltage Applications and Delivering Maximum Power Efficiency to Help Customers Develop Lighter, Smaller, More Reliable System Designs

ALISO VIEJO, Calif. -- Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today introduced its new silicon carbide (SiC) MOSFET product family with new 1200 volt (V) solutions. The innovative new SiC MOSFETs are designed for high-power industrial applications where efficiency is critical. These applications include solutions for solar inverters, electric vehicles, welding and medical devices.

Microsemi is well positioned to capitalize on SiC semiconductor market growth. Market researcher Yole Développement estimates that the SiC power semiconductor market will grow 39 percent year-over-year from 2015 to 2020, and Market Research estimates the SiC semiconductor market will grow 38 percent year-over-year to $5.3 billion by 2022.

New SiC MOSFETs
The new SiC MOSFETs provide patented technology from Microsemi and are designed to help customers develop solutions that operate at higher frequency and improve system efficiency.

Microsemi's patented SiC MOSFET technology features include:

--  Best-in-class RDS(on)( )vs. temperature
--  Ultra-low gate resistance for minimizing switching energy loss
--  Superior maximum switching frequency
--  Outstanding ruggedness with superior short circuit withstand

"Microsemi's 1200V SiC MOSFETs are establishing a new benchmark for performance," said Marc Vandenberg, general manager for Microsemi's Power Products Group. "Microsemi continues to expand its SiC product portfolio by capitalizing on our in-house SiC fabrication capabilities and delivering innovative high-power solutions to our customers."

Microsemi's 1200V SiC MOSFETs are rated at 80 milliohms and 50 milliohms and provide customers more development flexibility by offering both industry standard TO-247 and SOT-227 packages:

-- APT40SM120B               1200V, 80milliohm, 40A, TO-247 package
-- APT40SM120J                1200V, 80milliohm, 40A SOT-227 package
-- APT50SM120B               1200V, 50milliohm, 50A, TO-247 package
-- APT50SM120J                1200V, 50milliohm, 50A, SOT-227 package

For more information on the SiC MOSFETs visit www.microsemi.com/sicmosfets.

New SiC MOSFET Power Modules
SiC MOSFETs are also integrated into the company's expanded MOSFET power modules, which are used in battery charging, aerospace, solar, welding and other high-power industrial applications. The new power modules provide higher frequency operation and improve system efficiency. For more information, visit www.microsemi.com/sicpowermodules.

New 1700V Schottky Diodes
Microsemi's SiC MOSFETs are also complimented by Microsemi's complete product line of SiC Schottky Diodes. The new 1700V SiC Schottky Diode expands the line beyond the 1200V and 650V. These products are designed with superior passivation technology for ruggedness in outdoor and humid applications. For more information, visit www.microsemi.com/sicdiodes.

Availability
Microsemi's new 1200V SiC MOSFETs are available now in TO-247 packages and in July 2014 in SOT-227 packages. SiC MOSFET power modules and the 1700V Schottky Diode are available now. For more information, or to obtain product samples, contact your local distributor or Microsemi sales representative, or email sales.support@microsemi.com. Data sheets are available at www.microsemi.com.

Microsemi SiC solutions, power products, sensor devices, ultra-low power radios and SoC FPGA-based motor control solutions will be displayed at the upcoming PCIM show in Nuremburg, Germany May 20-22, 2014. For more information, visit http://www.mesago.de/en/PCIM/home.htm.

About Microsemi
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,400 employees globally. Learn more at www.microsemi.com.

Microsemi and the Microsemi logo are registered trademarks or service marks of Microsemi Corporation and/or its affiliates. Third-party trademarks and service marks mentioned herein are the property of their respective owners.

CONTACT:
Richard Round
Sr. Manager
Marketing Communications
949-380-6135

Beth P. Quezada
Communications Specialist
949.380.6102
Email: press@microsemi.com

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