SiC JFETs target high-end audio applications.
August 5, 2011 -
Compatible with standard gate driver ICs, SJEP120R100A and SJEP120R063A are silicon carbide (SiC) JFETS feature respective RDS(on) max of 0.100 ohm and 0.063 ohm. Both products offer positive temperature coefficient that facilitates paralleling as well as fast switching with no tail current at up to 150°C max. Both SiC JFETs are available in TO-247 packages, and 100 mohm part also comes in die form for integration into modules.
Original Press release
SemiSouth Laboratories, Inc.
201 Research Blvd.
Starkville, MS, 39759
USA
SiC JFETs from SemiSouth Target High-End Audio
15% lower cost; high linearity, low distortion; available packaged or in die form
SemiSouth Laboratories, Inc., the leading manufacturer of silicon carbide (SiC) transistor technology for high-power, high-efficiency, harsh-environment power management and conversion applications, has launched a new family of low cost SiC JFETS with very good linearity targeted at high-end audio applications.
SJEP120R100A and SJEP120R063A offer a very good linearity and best-in-class distortion. Compatible with standard gate driver ICs, both versions feature a positive temperature coefficient for ease of paralleling; extremely fast switching with no 'tail' current at up to a maximum operating temperature of 150degC and a low RDS(on)max of 0.100W and 0.063W respectively. Devices are available in TO-247 packages; the 100mW part is also available in die form for integration into modules.
Comments Nelson Pass, founder of leading audio amplifier manufacturer Nelson Pass Inc.: "Over the last forty years I have greatly appreciated the qualities of low power JFETs in audio circuits, and experimenting with the few examples of 'unobtainable' power JFETs has convinced me of their great potential. With the new SiC power JFETs from SemiSouth, this potential has been realized in reliable linear power amplifiers. In push-pull topologies, they exhibit a 50% to 70% improvement in distortion, and in single-ended circuits the improvement has been nearly ten-fold. Currently we profitably produce a small high-end audio amplifier using the SJEP120R100A devices and are engaged in developing other higher power amplifiers using this and the SJDP120R085 depletion mode devices.
Comments Dieter Liesabeths, SemiSouth's Director of Sales: "These parts are especially suitable for high end audio amplifier designs which demand the best linearity performance and lowest distortion. Compared to conventional SiC JFET for power applications, the prices for these audio parts has been reduced by about 15% in order to meet the demand of customers"
About SemiSouth Laboratories, Inc.
SemiSouth, a privately owned corporation with its main offices and foundry in Starkville, Mississippi, (USA), focuses on silicon carbide (SiC) power devices and electronics, targeting applications such as: solar inverters; power conversion in computing and network power supplies; variable-speed drives for industrial motors and hybrid electric vehicles; and products used in high-power, harsh-environment military and aerospace environments. The company was formed in 2000, has sold products globally through direct sales or distributors since 2005, and received a major growth investment from Power Integrations (NASDAQ: POWI) in 2010. It introduced the world's first commercial, cost-effective normally-off SiC JFETs in 2008, which have enabled world-record energy efficiencies for its customer's products. More information is available at www.semisouth.com.
For further information:
Brenda Temple, Director of Inside Sales and Contracts
SemiSouth Laboratories, Inc.
Tel: +1 (662) 324 7607 ext. 29
E-mail: brenda.temple@semisouth.com
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