SRAM Products operate up to 533 MHz.
September 18, 2009 -
Respectively capable of 533 and 333 MHz max operating speeds, QDRII+/DDRII+ and QDRII/DDRII SRAM support high-speed processing for packet look-up and packet buffer applications in high-end routers and switchers that support 10G, 40G, and beyond multi-layer communication systems. Both 72-Mbit Quad Data Rate II+ (QDR(TM) II+) and Double Data Rate II+ (DDRII+) SRAM products are manufactured with 45 nm fabrication process. Package is 165-pin plastic FBGA with 15 x 17 mm size.
(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)
Original Press release
Renesas Technology America, Inc.
450 Holger Way
San Jose, CA, 95134-1368
USA
Renesas Technology Introduces Highest Level Performance 72-Mbit QDR(TM) II+ SRAM and DDR II+ SRAM Family
533 MHz frequency for Next-Generation Communication Networks
Tokyo, July 7, 2009 -- Renesas Technology Corp. today announced the 72-Mbit Quad Data Rate II+ (QDR(TM) II+) and Double Data Rate II+ (DDRII+) high-speed SRAM *1 product family for use in high-end routers and switches in next-generation communication networks. These SRAM products achieve the industry's fastest level operating speed and are compliant with the QDR Consortium *2 industry standard. Additionally, this release also includes 72-Mbit QDRII and DDRII SRAM devices. The full range of devices, consisting of multiple speeds and configurations, will be available from August 2009 sequentially in Japan.
These new products offer the following features.
(1) Achievement of the industry's fastest level operating speeds: 533 MHz for the QDRII+ and DDRII+ SRAM and 333 MHz for the QDRII and DDRII versions
For these products, Renesas greatly increased the operating speeds while maintaining low-voltage operation by utilizing the advanced 45 nm fabrication process. The QDRII SRAM products achieve the industry's highest operating speed level of 333 MHz, and the QDRII+ SRAM products also provide the industry's highest operating speed level of 533 MHz. These devices can support high-speed processing for packet look-up and packet buffer applications in high-end routers and switchers that support 10G, 40G, and beyond multi-layer communication systems.
(2) Broad portfolio of 72-Mbit devices
Renesas will provide products that support three data I/O widths (9, 18, or 36 bits) and two burst lengths (2 or 4 words). In addition, Renesas will also provide products that feature a built-in ODT (on-die termination) function that significantly reduces the signal quality degradation that can occur during high-speed operation. Renesas' extensive lineup of QDRII, DDR II, QDRII+, and DDRII+ SRAM products allows users to select solutions that are optimal for their systems.
Product Background
With the ever-growing popularity of the Internet, transmission speeds and the amount of traffic being sent to communication equipment continue to increase, with data rate speeds now exceeding 40-Gbits/second. Checking data destinations and managing data packet traffic in high-end networking equipment is driving the demand for high-density memory capable of high speeds. Furthermore, the complexity of data continues to increase with video, voice, and data applications, requiring even larger memory capacities.
Renesas Technology currently provides a broad range of SRAMs for industrial applications and for cache memory in UNIX *3 servers and workstations, and 18-Mbit Network SRAM and 36-Mbit DDRII and QDRII SRAM for communication equipment. As network equipment evolve to higher levels of performance and capability, Renesas Technology has leveraged its design expertise and manufacturing technologies to achieve higher speeds and high reliability for the 72-Mbit QDRII and QDRII+ SRAM products to meet the demands for higher speed, larger capacity, and greater bit widths required for communication applications.
Product Details
These products are available in all combinations of burst lengths and bit widths, and the standard HSTL (High-Speed Transistor Logic) interface is used for ultra high-speed synchronous SRAM.
The package used is a 165-pin plastic FBGA with a 15 mm x 17 mm size that features excellent thermal dissipation characteristics and is suitable for high-density mounting. These products are RoHS Directive *4 compliant and lead-free versions are also available. The QDR pin configuration can support seamless migration to densities up to 288 Mbits in the future. In addition, FBGA package products support the IEEE standard test access port and boundary scan architecture (IEEE Std 1149.1-1990) that allow interchange connection checking during module mounting to be conducted at the board level.
In future developments in this area, Renesas has a solid roadmap and commitment to develop even larger and higher performance QDR/DDR SRAM products to support evolving customer needs.
Notes: 1. Quad Data Rate II+ (QDR(TM)II+) and Double Data Rate II+ (DDRII+) SRAM:
QDRII+ SRAM is an even faster version of the second generation QDR SRAM product. DDRII+ SRAM is also a faster version of the second generation DDR SRAM product.
QDR SRAM and DDR SRAM adopt a DDR technique where, while acquiring the address and control signals from the processor or controller in synchronization with the system clock, the SRAM also writes or reads data signals in synchronization with both the system clock and an inverted system clock signal. As a result, these devices can achieve transfer rates that are twice those of earlier synchronous SRAM. Furthermore, since the input and output pins are separate and isolated, read and write operations can be performed at the same time. This allows data to be transferred with excellent efficiency and makes it possible to achieve data rates that are four times those of earlier synchronous SRAM devices.
Quad Data Rate and QDR include a new family of products developed by Cypress Semiconductor Corp., Integrated Device Technology, Inc., NEC Electronics Corporation, Samsung Electronics Co., Ltd., and Renesas Technology Corp.
2. The QDR Consortium (the QDR Co-Development Team):
In 1999, the QDR co-development team was created to define a new family of SRAM architectures for high-performance communications applications. The QDR co-development team currently consists of Cypress Semiconductor Corp., Integrated Device Technology, Inc., NEC Electronics Corporation, Samsung Electronics Co., Ltd., and Renesas Technology Corp. These companies cooperate in the development of the QDR family of networking SRAMs. They design and manufacture this family of products in their own fabrication facilities and develop products according to their own schedules, competing in the marketplace.
http://www.qdrconsortium.com/
3. UNIX is a registered trademark of The Open Group in the U.S. and other countries.
4. RoHS Directive: A European Union (EU) Directive for "the restriction of the use of certain hazardous substances in electrical and electronic equipment." It went into effect on July 1, 2006, and covers six substances: lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyl (PBB), and polybrominated diphenyl ether (PBDE).
* Other product names, company names, or brands mentioned are the property of their respective owners.
Typical Applications
Next-generation communication equipment such as high-end routers and switches
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