ThomasNet News Logo
Sign Up | Log In | ThomasNet Home | Promote Your Business

RF Power Transistor targets ATC radar aviation applications.

Print | 
Email |  Comment   Share  
November 26, 2012 - Based on GaN on SiC technologies, Model 2729GN-500 delivers 500 W of peak power with 12 dB of power gain and 53% drain efficiency over 2.7–2.9 GHz band. Drain bias-Vdd is +65 V and thermal resistance is 0.2°C/W. Built with 100% high-temperature gold metallization and wires, HEMT comes in hermetically solder-sealed, single-ended package. Device is intended for airport surveillance radar applications which are used to monitor and control aircrafts in terminal within 100 miles of airport.

Microsemi Delivers S-Band RF Power Transistor for Air Traffic Control Radar Aviation Applications


(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)

Microsemi Corporation
2381 Morse Ave.
Irvine, CA, 92614
USA



Press release date: November 13, 2012

New 500 Watt GaN on SiC Transistor Available Now

ALISO VIEJO, Calif.,  -- Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, has expanded its family of radio frequency (RF) transistors based on gallium nitride (GaN) on silicon carbide (SiC) technologies with a new S-band 500 watt (W) RF device. The 2729GN-500 is targeted at high-power air traffic control airport surveillance radar (ASR) applications. ASR is used to monitor and control aircrafts in the terminal within approximately 100 miles of an airport.

The 2729GN-500 transistor delivers unparalleled performance of 500W of peak power with 12 decibel (dB) of power gain and 53 percent drain efficiency over the band 2.7 to 2.9 gigahertz (GHz) to provide the maximum power in a single device covering this band. Key product features include:

-- Standard pulse burst format: 100µs, 10 percent DF (microseconds)
-- Excellent output power:      500W
-- High power gain:             >11.5 dB min
-- Drain bias-Vdd:              +65V
-- Low thermal resistance:      0.2 degrees  C/W

Systems benefits that are achieved with GaN on SiC high electron mobility transistor (HEMT) include:

--  Single-ended design with simplified impedance matching, replacing lower power devices that require additional levels of combining;
--  Highest peak power and power gain for reduced system power stages and final stage combining;
--  Single stage pair provides 1.0 kilowatt (kW) peak output power with margin, four-way combined to provide full system 2 kW peak output power;
--  High operating voltage at 65 volts reduce power supply size and DC current demand;
--  Extremely rugged performance improves system yields; and
--  Amplifier size is 50 percent smaller than devices built with silicon bipolar junction transistors (Si BJT) or laterally diffused metal oxide semiconductor (LDMOS) devices.

Packaging and Availability:
The 2729GN-500 is offered in a single-ended package and is built with 100 percent high-temperature gold (Au) metallization and wires in a hermetically solder-sealed package for long-term military reliability. Loaner demonstration units are available to qualified customers and technical datasheets are available on the Microsemi website at www.microsemi.com. For more information please email sales.support@microsemi.com.

About Microsemi
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense security, aerospace and industrial markets. Products include high-performance, radiation-hardened and highly reliable analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,000 employees globally. Learn more at www.microsemi.com.

Microsemi and the Microsemi logo are registered trademarks or service marks of Microsemi Corporation and/or its affiliates. Third-party trademarks and service marks mentioned herein are the property of their respective owners.

CONTACT: Gwen Carlson, Director of Corp. Communications, +1-949-380-6135, or Beth P. Quezada, Communications Specialist, +1-949-380-6102, press@microsemi.com

Web Site: www.microsemi.com
Print | 
Email |  Comment   Share  
Contacts: View detailed contact information.


 

Post a comment about this story

Name:
E-mail:
(your e-mail address will not be posted)
Comment title:
Comment:
To submit comment, enter the security code shown below and press 'Post Comment'.
 



 See related product stories
More .....
 See more product news in:
Electronic Components and Devices
 More New Product News from this company:
DSP Platform targets intelligent processing markets.
Clock Generators suit networking and storage applications.
FPGA Evaluation Kit expedites prototyping/application development.
SiC MOSFETs suit high-voltage industrial applications.
Low Noise Chip Scale Atomic Clock addresses SWaP requirements.
More ....
| Featured Manufacturing Jobs
 Other News from this company:
Microsemi Strengthens Its Timing Products Leadership with New Any-to-any Frequency Clock Multiplier and Jitter Attenuator Clock Management Products
Microsemi and EInfochips Collaborate to Improve Efficiency, Reliability and Performance for Critical Avionics Systems Development and Design
Microsemi's New Libero SoC v11.4 Software Makes Significant FPGA Design Productivity Gains with Runtime Improvements of up to 35 Percent
Microsemi Continues Its FPGA Security Leadership for Secure Boot with Extension of Cryptography Research Differential Power Analysis Patent License
Microsemi and Ultra Communications Collaborate to Enable High Reliability, Ruggedized Transceivers for Defense and Commercial Aviation Applications
More ....
 Tools for you
Watch Company 
View Company Profile
Company web site
More news from this company
E-mail this story to a friend
Save Story
Search for suppliers of
RF Transistors
Power Transistors
Join the forum discussion at:
Wired In




Home  |  My ThomasNet News®  |  Industry Market Trends®  |  Submit Release  |  Advertise  |  Contact News  |  About Us
Brought to you by Thomasnet.com        Browse ThomasNet Directory

Copyright © 2014 Thomas Publishing Company. All Rights Reserved.
Terms of Use - Privacy Policy



Error close

Please enter a valid email address