RF Power Transistor targets ATC radar aviation applications.November 26, 2012 -
Based on GaN on SiC technologies, Model 2729GN-500 delivers 500 W of peak power with 12 dB of power gain and 53% drain efficiency over 2.7–2.9 GHz band. Drain bias-Vdd is +65 V and thermal resistance is 0.2°C/W. Built with 100% high-temperature gold metallization and wires, HEMT comes in hermetically solder-sealed, single-ended package. Device is intended for airport surveillance radar applications which are used to monitor and control aircrafts in terminal within 100 miles of airport.
Microsemi Delivers S-Band RF Power Transistor for Air Traffic Control Radar Aviation Applications
(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)
2381 Morse Ave.
Irvine, CA, 92614
Press release date: November 13, 2012
New 500 Watt GaN on SiC Transistor Available Now
ALISO VIEJO, Calif., -- Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, has expanded its family of radio frequency (RF) transistors based on gallium nitride (GaN) on silicon carbide (SiC) technologies with a new S-band 500 watt (W) RF device. The 2729GN-500 is targeted at high-power air traffic control airport surveillance radar (ASR) applications. ASR is used to monitor and control aircrafts in the terminal within approximately 100 miles of an airport.
The 2729GN-500 transistor delivers unparalleled performance of 500W of peak power with 12 decibel (dB) of power gain and 53 percent drain efficiency over the band 2.7 to 2.9 gigahertz (GHz) to provide the maximum power in a single device covering this band. Key product features include:
-- Standard pulse burst format: 100µs, 10 percent DF (microseconds)
-- Excellent output power: 500W
-- High power gain: >11.5 dB min
-- Drain bias-Vdd: +65V
-- Low thermal resistance: 0.2 degrees C/W
Systems benefits that are achieved with GaN on SiC high electron mobility transistor (HEMT) include:
-- Single-ended design with simplified impedance matching, replacing lower power devices that require additional levels of combining;
-- Highest peak power and power gain for reduced system power stages and final stage combining;
-- Single stage pair provides 1.0 kilowatt (kW) peak output power with margin, four-way combined to provide full system 2 kW peak output power;
-- High operating voltage at 65 volts reduce power supply size and DC current demand;
-- Extremely rugged performance improves system yields; and
-- Amplifier size is 50 percent smaller than devices built with silicon bipolar junction transistors (Si BJT) or laterally diffused metal oxide semiconductor (LDMOS) devices.
Packaging and Availability:
The 2729GN-500 is offered in a single-ended package and is built with 100 percent high-temperature gold (Au) metallization and wires in a hermetically solder-sealed package for long-term military reliability. Loaner demonstration units are available to qualified customers and technical datasheets are available on the Microsemi website at www.microsemi.com. For more information please email firstname.lastname@example.org.
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense security, aerospace and industrial markets. Products include high-performance, radiation-hardened and highly reliable analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,000 employees globally. Learn more at www.microsemi.com.
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