Pseudo SRAM Devices come in 32 and 64 Mb densities.October 14, 2010 -
Combining characteristics and usability of SRAM with associated density of DRAM, 64 and 32 Mb Pseudo SRAM (PSRAM) devices are respectively organized as 4M x 16 and 2M x 16. Refresh of DRAM cells is handled internally, eliminating need for external refresh controller. CRAM 1.5 option adds synchronous/burst interface mode, on-die temperature sensor, fixed latency, and drive strength control for outputs. Additionally, CRAM 2.0 adds multiplexed address and data bus.
(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)
Original Press release
Integrated Silicon Solution, Inc. (ISSI)
2231 Lawson Lane
Santa Clara, CA, 95054 3311
USA
ISSI Announces 64Mb and 32Mb Pseudo SRAMs (PSRAMs) Targeted for Wireless, Industrial, Embedded, and Automotive Applications
Integrated Silicon Solution, Inc. (Nasdaq:ISSI), a leader in advanced memory solutions, today added the 64Mb and 32Mb densities to their line of Pseudo SRAMs. These new devices add to the previously released 4Mb and 8Mb parts, and give the design engineer a wide range of densities from which to choose to best fit the application's requirements. These PSRAMs are designed to provide the characteristics and ease of use of an SRAM, but with the improved density and cost reduction associated with using a DRAM.
The 64Mb is organized as 4Mx16 and the 32Mb is 2Mx16. The IS66WVE2M16ALL/BLL and the IS66WVE4M16ALL/BLL are the 1.8V and 3.3V options of the asynchronous solution for this product family. The IS66WVC2M16ALL, IS66WVD2M16ALL, IS66WVC4M16ALL and the IS66WVD4M16ALL are the CRAM 1.5 and CRAM 2.0 options of this product family. As such, this product line provides the designer with a variety of high density, cost effective, low power memory solutions.
In these products, refresh of the DRAM cells is handled internally, eliminating the need for an external refresh controller. Partial Array Refresh (PAR), low standby current and Deep Power Down (DPD) modes of these products makes it ideal for low power applications. The CRAM 1.5 option adds the synchronous / burst interface mode, an on-die temperature sensor for temperature compensated refresh (TCR), fixed latency, and drive strength control for the outputs. In addition to the CRAM 1.5 feature set, CRAM 2.0 adds a multiplexed address and data bus for reduced pin count.
"ISSI's Pseudo SRAMs provide the designer with a cost effective low power solution for a variety of applications that would normally use low power SRAMs," said Ron Kalakuntla, ISSI vice president of marketing. "These new 32Mb and 64Mb densities add to our existing 4Mb and 8Mb densities to provide our customers with a broad PSRAM offering."
This cost effective, low power, high density memory combined with extended temperature, and options that include the Know Good Die (KGD) format make the product line perfect for wireless, industrial, embedded, and automotive applications.
About the Company
ISSI is a fabless semiconductor company that designs and markets high performance integrated circuits for the following key markets: (i) digital consumer electronics, (ii) networking, (iii) mobile communications, (iv) automotive electronics, and (v) industrial. The Company's primary products are high speed and low power SRAM and low and medium density DRAM. Through its Giantec business unit, the Company also designs and markets EEPROM, SmartCards and analog power management devices focused on its key markets. ISSI is headquartered in Silicon Valley with worldwide offices in Taiwan, Japan, Singapore, China, Europe, Hong Kong, India, and Korea. Visit our web site at http://www.issi.com/.
|
|
|
|
|
|
|
| 
