Product News: Electronic Components & Devices
Power MOSFETs offer on-resistance down to 20 mOhm at 4.5 V.
Press Release Summary:
January 16, 2013 - Housed in 1.6 x 1.6 x 0.6 mm CSP MICRO FOOT® package, 8 V n-channel Si8424CDB and -20 V p-channel Si8425DB offer maximum on-resistance of 20 mΩ and 23 mΩ, respectively, at 4.5 V gate drive. Smaller 8 V n-channel Si8466EDB, measuring 1 x 1 x 0.55 mm, features max on-resistance of 43 mΩ at 4.5 V and provides 3,000 V typical ESD protection. RoHS-compliant and halogen-free, TrenchFET® power MOSFETs are suited for battery or load switching in power management applications for portable electronics.
Original Press Release
New Vishay Siliconix Power MOSFETs
Press release date: January 15, 2013
New Vishay Siliconix Power MOSFETs Offer Industry-Low On-Resistance Down to 20 mΩ at 4.5 V in Chipscale MICRO FOOT® 1 mm by 1 mm and 1.6 mm by 1.6 mm Packages
MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced new 8 V and 20 V n-channel and p-channel TrenchFET® power MOSFETs with the industry's lowest on-resistance in 1 mm by 1 mm by 0.55 mm and 1.6 mm by 1.6 mm by 0.6 mm CSP MICRO FOOT® packages.
The devices released today will be used for battery or load switching in power management applications for portable electronics such as smartphones, tablet PCs, and mobile computing devices. The MOSFETs' compact outlines save PCB space and provide ultra-thin profiles to enable slimmer and lighter portable electronics, while their low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.
For applications where low on-resistance is more critical than space, the 8 V n-channel Si8424CDB and - 20 V p-channel Si8425DB offer maximum on-resistance of 20 mΩ and 23 mΩ, respectively, at a 4.5 V gate drive. The devices are offered in the 1.6 mm by 1.6 mm by 0.6 mm CSP package. With 43 mΩ maximum on-resistance at 4.5 V, the smaller 1 mm by 1 mm by 0.55 mm Si8466EDB 8 V n-channel MOSFET will be used for applications where space is even more critical than on-resistance. The Si8466EDB also provides 3000 V typical ESD protection.
The Si8466EDB and Si8424CDB offer on-resistance ratings down to 1.2 V, allowing the devices to work with the lower-voltage gate drives and lower bus voltages common in handheld devices, saving the space and cost of level-shifting circuitry. All devices released today are compliant to RoHS Directive 2011/65/EU and halogen-free according to the JEDEC JS709A definition.
The Si8466EDB, Si8424CDB, and Si8425DB are the latest expansion to the MICRO FOOT family, which can be found at http://www.vishay.com/mosfets/micro-foot-package/.
Device Specification Table:
|RDS(ON) (mΩ) max. @|
|Outline (mm x mm)||1 x 1||1.6 x 1.6||1.6 x 1.6|
Samples and production quantities of the new TrenchFET power MOSFET are available now, with lead times of 12 to 14 weeks for larger orders. Pricing for U.S. delivery starts at $0.15 per piece in 100,000-piece quantities. Follow TrenchFET power MOSFETs in the MICRO FOOT package at http://twitter.com/vishayindust.
Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.
TrenchFET and MICRO FOOT are registered trademarks of Siliconix incorporated.