Power MOSFETs feature low on-resistance.
Press Release Summary:
Halogen-free and RoHS-compliant, TrenchFET® Gen III P-channel MOSFETs include -40 V SiS443DN in PowerPAK 1212-8 package and -30 V SiSS27DN in PowerPAK 1212-8S package. Units are optimized for 24, 19, and 12 V load switches as well as adapter and battery switches in wide range of applications including power management in mobile computing, smartphones, and tablets. Max on-resistance is 11.7 mΩ (-10 V) and 16 mΩ (-4.5 V) for SiS443DN and 5.6 mΩ (-10 V) and 9 mΩ (-4.5 V) for SiSS27DN.
Original Press Release:
Vishay Intertechnology Expands Gen III P-Channel Offering With New -40 V and -30 V MOSFETs in PowerPAK® Packages
First -40 V P-Channel Gen III Device, First -30 V MOSFET in the PowerPAK 1212-8S
MALVERN, Pa. – Vishay Intertechnology, Inc. (NYSE: VSH) today extended its offering of TrenchFET® Gen III p-channel power MOSFETs with new -40 V and -30 V devices offered in the PowerPAK® 1212-8 and PowerPAK 1212-8S packages. Featuring industry-low on-resistance at -10 V and -4.5 V gate drives, the Vishay Siliconix SiS443DN is the first -40 V p-channel Gen III device, while the SiSS27DN is the first -30 V MOSFET in the PowerPAK 1212-8S package.
The SiS443DN and SiSS27DN are optimized for 24 V, 19 V, and 12 V load switches, as well as adapter and battery switches in a wide range of applications, including power management in mobile computing, smartphones, and tablets. The devices' industry-low on-resistance allows designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times.
In applications requiring a higher voltage rating, the -40 V SiS443DN provides maximum on-resistance of 11.7 mΩ (-10 V) and 16 mΩ (-4.5 V) in the 3.3 mm by 3.3 mm PowerPAK 1212-8 package. When on-resistance is critical, the SiSS27DN offers extremely low values of 5.6 mΩ (-10 V) and 9 mΩ (-4.5 V) in the PowerPAK 1212-8S package with a low 0.75 mm profile.
The SiS443DN and SiSS27DN are 100 % Rg- and UIS-tested. The MOSFETs are halogen-free according to the JEDEC JS709A definition and compliant to RoHS Directive 2011/65/EU.
Device Specification Table:
Part number | SiSS27DN | SiS443DN |
VDS (V) | -30 | -40 |
VGS (V) | 20 | 20 |
RDS(ON) (mΩ) @ 10V | 5.6 | 11.7 |
6 V | 7 | - |
4.5 V | 9 | 16 |
Package | PowerPAK 1212-8S | Â PowerPAK 1212-8 |
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Samples and production quantities of the new p-channel MOSFETs are available now, with lead times of 14 to 16 weeks for larger orders. Pricing for U.S. delivery only starts at $0.15 per piece in 100,000-piece quantities.
Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.
TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated.
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