Power MOSFETs feature high-efficiency design.
May 13, 2010 -
Model STL21N65M5 includes MDmesh(TM) V power MOSFET technology, which incorporates exposed metal drain pad for efficient removal of internally generated heat in 1 mm high, 8 x 8 mm SMT PowerFLAT(TM) 8x8 HV package. Offering breakdown voltage of 650 V, unit also has low gate charge, which enables energy-efficient switching at high speeds. It has RDS(ON) of 0.190 W and maximum rated current of 17 A. Junction-to-case thermal resistance is 1.0°C/W.
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Original Press release
STMicroelectronics
10 Maguire Road
Lexington, MA, 02421
USA
STMicroelectronics Unveils Breakthrough Power Package Extending Power-Density Advantage of MDmesh(TM) V MOSFETs
New package maximizes efficiency advantages of MDmesh(TM) V technology
Geneva - STMicroelectronics (NYSE: STM), a world leader in power semiconductors, has increased the power density achievable with its latest generation MDmesh(TM) V power MOSFET technology by introducing an advanced high-performance power package.
The new 1mm-high surface-mount package houses the industry-standard TO-220 die size within a leadless outline measuring only 8x8mm and features an exposed metal drain pad for efficient removal of internally generated heat.
Its low profile will enable designers to achieve slimmer power supply enclosures enabling compact and stylish new products for today's markets.
This new standard is available from two companies: STMicroelectronics and Infineon Technologies will introduce MOSFETs using this innovative package, which is named PowerFLAT(TM) 8x8 HV by ST and ThinPAK 8x8 by Infineon, therefore providing customers with a high-quality alternative source.
The new package's compact form factor and high thermal performance, combined with the unequalled low RDS(ON) per die area of ST's MDmesh V technology, maximize power density and reliability to save PCB space. ST will add MOSFETs in the PowerFLAT 8x8 HV to its existing MDmesh V portfolio, and today announced the first of these: the 650V STL21N65M5.
"Our fruitful co-operation with Infineon has produced a high-performance package allowing customers to benefit from cutting-edge design in a footprint supported by two major global power-semiconductor suppliers," said Maurizio Giudice, Marketing Director, Power Transistor Division, STMicroelectronics. "Our new MOSFETs combining this package breakthrough with our unique MDmesh V process technology, which is the most advanced in the industry, will deliver the highest power density and efficiency among devices of comparable voltage rating."
Major features of STL21N65M5:
RDS(ON): 0.190 Ohms
Maximum rated current (ID): 17A
Junction-to-case thermal resistance (Rthj-c): 1.0 degrees C/W
Samples of the STL21N65M5 in the PowerFLAT 8x8 HV package are available now with full production scheduled for July 2010. Pricing is $8 in quantities of 10 pieces; further pricing options are available for larger quantities.
For further information on the PoweFLAT 8x8 HV package, go to
www.st.com/powerflat8x8
About ST's MDmesh(TM) V Technology:
MDmesh V is the latest evolution of ST's proven Multi-Drain Mesh technology, which minimizes conduction losses without seriously impairing switching performance. MOSFETs manufactured using this technology enable designers to fulfill eco-design directives calling for more efficient electronic products and to target opportunities in emerging sectors such as renewable energy, where minimizing power conversion losses is critical in the drive to reduce the cost per Watt.
The MDmesh V architecture has an improved transistor drain structure, which lowers the drain-source voltage drop. This results in outstanding RDS(ON) per silicon die area, enabling physically small components to achieve ultra-low on-state losses. In fact, MDmesh V has achieved the world's lowest RDS(ON) for a 650V MOSFET in the standard TO-220 package.
MDmesh V devices also have low gate charge (Qg), which enables energy-efficient switching at high speeds and produces a low RDS(ON) x Qg Figure of Merit (FOM). The breakdown voltage of 650V is also higher than competing 600V devices, delivering a valuable extra safety margin for designers. The devices also have high Vdss rating, high dV/dt capability, and are 100% avalanche tested. As an additional benefit, a cleaner turn-off waveform simplifies gate control and reduces demand for EMI filtering.
MDmesh V technology is already offered in a broad range of industry-standard packages, including TO-220, TO-220FP, I2PAK, TO-247, and Max247.
Further information is available at www.st.com/mdmeshv
About STMicroelectronics
STMicroelectronics is a global leader serving customers across the spectrum of electronics applications with innovative semiconductor solutions. ST aims to be the undisputed leader in multimedia convergence and power applications leveraging its vast array of technologies, design expertise and combination of intellectual property portfolio, strategic partnerships and manufacturing strength. In 2009, the Company's net revenues were $8.51 billion. Further information on ST can be found at www.st.com.
MDmesh is a trademark of STMicroelectronics. All other trademarks or registered trademarks are the property of their respective owners.
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