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Power MOSFETs feature dimensions of 1 x 1 x 0.548 mm.

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Power MOSFETs feature dimensions of 1 x 1 x 0.548 mm.
Power MOSFETs feature dimensions of 1 x 1 x 0.548 mm.

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October 28, 2009 - Model Si8461DB MICRO FOOT® power MOSFETs offer on-resistance of 0.1 W at 4.5 V gate drive and are specified for maximum on-resistance values at 2.5, 1.8, and 1.5 V. Suitable for applications requiring higher input voltages, Si8465DB has gate-to-source voltage of 12 V with on-resistance of 0.104 W at 4.5 V and 0.148 W at 2.5 V gate drive. Both 20 V p-channel devices are designed for load switch, battery switch, and charger switch applications in portable devices.

(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)
Original Press release

Vishay Intertechnology, Inc.
63 Lincoln Hwy., P.O. Box 4004
Malvern, PA, 19355 2143
USA



Vishay's New 1 x 1 mm Maximum MICRO FOOT® Devices Are Industry's Smallest Chipscale MOSFETs; Include First Device Under 1.2 mm˛ with 12 V Gate-to-Source Voltage


MALVERN, PENNSYLVANIA - Oct. 16, 2009 - Vishay Intertechnology, Inc. (NYSE: VSH) today released two MICRO FOOT® power MOSFETs with maximum dimensions of 1 x 1 x 0.548 mm, which sets a new milestone as the smallest chipscale power MOSFETs yet.

The 20 V p-channel Si8461DB and Si8465DB will be used for load switch, battery switch, and charger switch applications in a wide range of portable devices, where their small size and height will help reduce the space occupied by power management circuitry and/or enable more functionality. Compared to the next smallest chipscale power MOSFET on the market, the 1 x 1 x 0.548 mm MICRO FOOT has a 9% smaller footprint.

On-resistance for the Si8461DB is 0.1 W at a 4.5 V gate drive, which represents a tenfold improvement over non-chipscale devices with similar footprint dimensions and thus provides a significant opportunity to conserve battery energy in portable devices. In addition to the 4.5 V rating, the Si8461DB is specified for maximum on-resistance values at 2.5 V, 1.8 V, and 1.5 V, which aligns the device with the smaller input signals common in portable systems. For applications requiring higher input voltages such as charger switches, the Si8465DB has a gate-to-source voltage of 12 V; on-resistance is 0.104 W at a 4.5 V gate drive and 0.148 W at 2.5 V.

Samples and production quantities of the Si8461DB and Si8465DB are available now, with lead times of 10 to 12 weeks for larger orders.

Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, MOSFETs, optoelectronics, and selected ICs) and passive electronic components (resistors, capacitors, inductors, sensors, and transducers). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Its product innovations, successful acquisition strategy, and "one-stop shop" service have made Vishay a global industry leader. Vishay can be found on the Internet at http://www.vishay.com.

MICRO FOOT is a registered trademark of Siliconix incorporated
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