Power MOSFETs are optimized for low on-resistance.January 7, 2009 -
Supplied in PowerPAK® SO-8 package, SiR440DP Gen III TrenchFET® power MOSFET is 20 V n-channel device offering max on-resistance of 2.0 milliohm at 4.5 V gate drive and 1.55 milliohm at 10 V gate drive. On-resistance times gate charge is 87 nC at 4.5 V, and construction is lead (Pb)-free, halogen-free, and RoHS-compliant. Product is used as low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
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Original Press release
Vishay Intertechnology, Inc.
63 Lincoln Hwy., P.O. Box 4004
Malvern, PA, 19355 2143
USA
New Vishay Siliconix 20-V TrenchFET® Gen III Power MOSFET Features Industry-Best Maximum 2.0-mohm On-Resistance at 4.5 V and 1.55 mohm at 10 V
Device Offers Industry-Best On-Resistance Times Gate Charge FOM in PowerPAK® SO-8 Package of 87 nC
MALVERN, PENNSYLVANIA - Nov. 19, 2008 - Vishay Intertechnology, Inc. (NYSE: VSH) today expanded its family of Gen III TrenchFET® power MOSFETs with the release of a new 20-V n-channel device offering the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8 package type.
The SiR440DP features a maximum on-resistance of 2.0 mW at a 4.5-V gate drive and 1.55 mW at a 10-V gate drive. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 87 at 4.5 V.
Compared to the closest competing devices optimized for low conduction losses and low switching losses, these specifications represent an improvement for on-resistance of 23 % at 4.5 V and 22.5 % at 10 V, and a 27 % lower FOM. Lower on-resistance and gate charge translate into lower conduction and switching losses.
The Vishay Siliconix SiR440DP will be used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications. Its low conduction and switching losses will enable more power-efficient and space-efficient designs for voltage regulator modules (VRMs), servers, and a wide range of systems using point-of-load (POL) power conversion.
Vishay has also released the new 20-V SiR866DP and SiR890DP n-channel power MOSFETs. Respectively, the devices offer on-resistance at 4.5 V of 2.5 mW and 4 mW, on resistance at 10 V of 1.9 mW and 2.9 mW, with typical gate charges of 35.3 nC and 20 nC. All three new power MOSFETs are offered in the PowerPAK SO-8 package type. The devices are lead (Pb)-free, halogen-free, and RoHS-compliant, meeting the demands of international legislation for elimination of hazardous substances.
Samples and production quantities of the SiR440DP, SiR866DP, and SiR890DP are available now, with lead times of 10 to 12 weeks for large orders.
Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, transistors, and optoelectronics and selected ICs) and passive electronic components (resistors, capacitors, inductors, sensors, and transducers). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Its product innovations, successful acquisition strategy, and ability to provide "one-stop shop" service have made Vishay a global industry leader. Vishay can be found on the Internet at http://www.vishay.com.
TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated
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