Power MOSFET features 6.1 mW RDS(on) in SO-8 package.
September 1, 2009 -
Model SiE876DF is 60 V device available in SO-8 PolarPAK® package that features lead-frame, encapsulated design. Maximum RDS(on) is 6.1 mW at 10 V gate drive while drain-source voltage rating is under 150 V. Incorporating TrenchFET® silicon which provides low conduction losses, n-channel device includes double-sided cooling for optimal thermal performance in high-current applications. It is suited for industrial power supplies, motor control circuits, and more.
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Original Press release
Vishay Intertechnology, Inc.
63 Lincoln Hwy., P.O. Box 4004
Malvern, PA, 19355 2143
USA
Vishay Launches 60-V TrenchFET Power MOSFET with Industry-First 6.1 mW On-Resistance in SO-8 Size Package
MALVERN, Pa. - August 21, 2009 - A power MOSFET with the industry's lowest on-resistance for a 60-V device in a package with double-sided cooling was released today by Vishay Intertechnology, Inc. (NYSE: VSH).
The new SiE876DF, which comes in an SO-8 sized PolarPAK® package, boasts maximum on-resistance of 6.1 mW at a 10-V gate drive, a 13% improvement over the next best comparable device on the market.
The n-channel SiE876DF is targeted at industrial-type power supplies, motor control circuits, AC/DC power supplies for servers and routers, and systems using point-of-load (POL) power conversion. It will also be used as a primary side switch or for secondary side rectification in higher voltage intermediate bus conversion (IBC) designs.
In each of these applications, the low on-resistance of the SiE876DF will translate into lower conduction losses and thus save on energy. In addition to the low conduction losses provided by its TrenchFET® silicon, the double-sided cooling provided by the PolarPAK package enables better thermal performance for high-current applications. This allows for operation with a lower junction temperature. The PolarPAK's leadframe-based, encapsulated design also offers increased protection and reliability, in addition to simplifying manufacturing, since the die is not exposed. The device offers the same layout as other PolarPAK devices with a drain-source voltage rating under 150 V, thus simplifying PCB design. The SiE876DF is also 100% Rg- and UIS-tested.
Samples and production quantities of the SiE876DF 60-V are available now, with lead times of 10 to 12 weeks for larger orders.
Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, MOSFETs, optoelectronics, and selected ICs) and passive electronic components (resistors, capacitors, inductors, sensors, and transducers). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Its product innovations, successful acquisition strategy, and "one-stop shop" service have made Vishay a global industry leader. Vishay can be found on the Internet at http://www.vishay.com.
PolarPAK and TrenchFET are registered trademarks of Siliconix incorporated.
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