Power GaAs MESFET achieves drain efficiency over 55%.
May 9, 2005 - Suited for wireless communications, KGF1934 power gallium arsenide (GaAs) metal semiconductor field effect transistor (MESFET) achieves max drain efficiency with output power of 10 W at compression point of 1 db. Device also marks 25% in drain efficiency at normal operating output power level of 2 W. Specific applications include transmitter power amplifiers for W-CDMA and CDMA2000 wireless base stations.
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Original Press release
OKI Semiconductor
785 N. Mary Ave.
Sunnyvale, CA, 94086
USA
Oki Electric Develops Power GaAs MESFET with World's Highest Drain Efficiency
Tokyo (4/20) - Oki Electric Industry announced that it has developed the KGF1934, a power gallium arsenide (GaAs) metal semiconductor field effect transistor (MESFET) for 10W-level wireless communications.
The device achieves the industry's highest drain efficiency of over 55% with an output power of 10W at a compression point of 1db.
It also marks 25% in drain efficiency at the normal operating output power level of 2W.
Oki will start shipping the device in sample quantities this month, targeting applications including transmitter power amplifiers for W-CDMA and CDMA2000 wireless base stations.
The company will launch commercial production in June, aiming to ship 10,000 units per month.
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