Power Amplifiers are available with up to 450 W capacity.January 26, 2009 -
Power amplifiers are offered in 3 Class A models, based on GaAs ICs that provide low distortion linear performance across 0.8-3.1 GHz operating range, and which allow units to operate with short or open circuit. Based on GaN ICs, 2 models operate from 2-6 GHz and handle high levels of reflected power caused by EUT. All are powered from switched mode power supply, with power levels ranging from 30-450 W. Operating temperature ranges from 32-104°F.
(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)
Original Press release
Teseq, Inc.
52 Mayfield Ave.
Edison, NJ, 08837
USA
Five New Power Amplifiers Added to Teseq's Extensive Line Deliver Consistent Power; Higher Reliability
Edison, N.J. January 2009 - Teseq Inc., a leading developer and provider of instrumentation and systems for EMC emission and immunity testing, has significantly expanded its power amplifier line to include five new broadband models operating from 0.8 GHz to 3.1 GHz and 2 GHz to 6 GHz with power levels ranging from 30 W to 450 W. These new models, like the entire Teseq amplifier line, offer higher reliability and excellent performance in demanding EMC testing environments with non-ideal load conditions, due to antenna mismatch caused by equipment under test (EUT) in the antenna's path.
Three Class A models are based on gallium arsenide (GaAs) integrated circuit (IC) technology, offering significantly better compression characteristics and increased efficiencies than previous silicon-based low power amplifiers. The GaAs-based design provides low distortion linear performance across the 0.8 to 3.1 GHz operating range and ensures that the power amplifiers operate at full power without interruption, even when there is a short or open circuit.
Two additional models based on gallium nitride (GaN) IC technology deliver consistent power into the poor and variable match typically found in the 2 to 6 GHz range, resulting in more accurate, repeatable measurements. The GaN balanced pair design provides a high breakdown voltage to easily handle high levels of reflected power caused by the presence of the EUT.
The frequency ranges and power levels of the new amplifiers have been matched to the application requirements for extending IEC/EN 61000-4-3 radiated immunity testing to 6.0 GHz and for automotive immunity tests to 3.1 GHz.
For increased efficiency, all units are powered from a switched mode power supply giving the amplifiers a high power factor and a wide voltage operating range. Integral fans cool the units and an excess temperature sensor prevents faulty cooling. Each model can be equipped with an optional USB interface.
If standby mode is needed, the amplifiers feature a safety interlock connector activated by a short circuit to ground to put the amplifiers in standby mode. Indicators on the front panel display over-temperature and RF interlock conditions.
Harmonics are better than -20 dBC for the new amplifiers and stability is unconditional eliminating the chance of oscillation to yield better testing results. Operating temperature ranges from 0°C to 40°C (32°F to 104°F).
For more information, please visit www.teseq.com or contact MaryJane Salvador, Teseq Inc., 52 Mayfield Avenue, Edison, N.J. 08837. Tel: (732) 417-0501 ext. 239;
Fax: (732) 417-0511; E-mail: maryjane.salvador@teseq.com. Web: www.teseq.com.
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