Product News: Electronic Components & Devices
P-Channel MOSFET (-20 V) offers on-resistance down to 4.8 mohm.
Press Release Summary:
November 27, 2012 - Supplied in 3.3 x 3.3 x 0.75 mm package, Si7655DN offers respective max on-resistance of 3.6, 4.8, and 8.5 mΩ max at -10, -4.5, and -2.5 V gate drive. Applications include load switching and hot swapping in industrial systems; adaptor, battery, and load switches in charger circuits; and power management for mobile computing devices. Products can also be used for redundancy switch, OR-ing, and supervisory applications in fixed telecom, cell phone base station, and server/computer systems.
Original Press Release
Vishay Launches - 20 V P-Channel MOSFET in 3.3 mm Square Package with Industry-Low On-Resistance of 4.8 mOhm at a 4.5 V Gate Drive
Press release date: November 26, 2012
MALVERN, Pa. – Vishay Intertechnology, Inc. (NYSE: VSH) today released the Si7655DN, the industry's first - 20 V p-channel MOSFET in a 3.3 mm by 3.3 mm package to offer on-resistance of just 4.8 mΩ maximum at a 4.5 V gate drive. The Si7655DN is also the first device to be released in a new version of the Vishay Siliconix PowerPAK® 1212 package, which enables lower-RDS(on) devices while providing a 28 % slimmer nominal profile of 0.75 mm and maintaining the same PCB land pattern.
Applications for the Si7655DN will include load switching and hot swapping in industrial systems; adaptor, battery, and load switches in charger circuits; and power management for smart phones, tablet PCs, and other mobile computing devices. The Si7655DN will also be used for redundancy switch, OR-ing, and supervisory applications in fixed telecom, cell phone base station, and server/computer systems.
Utilizing the new PowerPAK 1212 package version and Vishay Siliconix's industry-leading p-channel Gen III technology, the Si7655DN provides industry-low maximum on-resistance of 3.6 mΩ (- 10 V), 4.8 mΩ (- 4.5 V), and 8.5 mΩ (- 2.5 V). These specifications represent an improvement of 17 % or better over the next best competing - 20 V devices.
The low on-resistance of the Si7655DN will allow designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times, while its 3.3 mm by 3.3 mm by 0.75 mm PowerPAK 1212-8S package will help to save valuable space.
The Si7655DN is the latest addition to Vishay's family of TrenchFET® Gen III p-channel MOSFETs. More information on the p-channel TrenchFET Gen III family is available at www.vishay.com/doc?49996.
Samples and production quantities of the new Si7655DN are available now, with lead times of 12 to 14 weeks for larger orders. Pricing for U.S. delivery only starts at $0.28 per piece in 100,000-piece quantities. Follow TrenchFET p-channel Gen III power MOSFETs at http://twitter.com/vishayindust.
Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.
PowerPAK and TrenchFET are registered trademarks of Siliconix incorporated.