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Normally-Off 650 V GaN Transistors aid high-speed system design.

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May 30, 2014 - Normally-off 650 V GaN transistors GS66502P, GS66504P, GS66506P, and GS66508P are, respectively, 8.5 A/165 mΩ, 17 A/82 mΩ, 25 A/55 mΩ, and 34 A/41 mΩ parts. Also available, GS43106L is 30 A/60 mΩ cascode. Reverse current capability, zero reverse recovery charge, and source-sense optimize high-speed design. These RoHS-compliant devices come in near chipscale, embedded GaNPX package that optimizes thermal performance as well as eliminates wire bonds and thereby minimizes inductance.

New 650V Normally-Off GaN Transistor Family Announced by GaN Systems


GaN Systems Corp.
2723 South State Street, Suite 150
Ann Arbor, MI, 48104
USA



Press release date: May 1, 2014

Low inductance, thermally-efficient GaNPX package enables high speed design

OTTAWA, Ontario – GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, has announced five new normally-off 650V GaN transistors optimised for high speed system design. The GS66502P, GS66504P, GS66506P and GS66508P are respectively 8.5A/165mΩ, 17A/82mΩ, 25A/55mΩ and 34A/41mΩ parts, while the GS43106L is a 30A/60mΩ cascode.

The new 650V enhancement mode parts feature a reverse current capability, zero reverse recovery charge and source-sense for optimal high speed design. RoHS compliant, the devices are delivered in GaN Systems’ near chipscale, embedded GaNPX package which eliminates wire bonds thereby minimising inductance. This package also optimises thermal performance and is extremely compact.

Girvan Patterson, President of GaN Systems comments: "With these new 650V parts as well as our recently-announced 100V family, GaN Systems offers a very wide range of parts which are available for are sampling now. Applications include high speed DC-DC converters, resonant converters, AC motor drives, inverters, battery chargers and switched mode power supplies.”

About GaN Systems
GaN Systems is the first place systems designers go to realize all the benefits of gallium nitride in their power conversion and control applications.  To overcome silicon’s limitations in switching speed, temperature, voltage and current, the company develops the most complete range of gallium nitride power switching solutions for a variety of markets.  Its unique Island Technology® addresses today’s cost, performance, and manufacturability challenges of gallium nitride resulting in devices that are smaller and more efficient than traditional design approaches.  The Company also leverages existing multi‐sourced manufacturing processes due to its transportable, fabless model, and makes it easy to incorporate gallium nitride into any design.  GaN Systems is run by a seasoned semiconductor team with decades of industry experience and a track record of repeated success.  The Company is leading the widespread adoption of gallium nitride into the power conversion industry. For more information, please visit: www.gansystems.com

More Information
Tracy Lamb
Corporate Communications
GaN Systems
+1 (613) 686-1996 ext. 149 (office)
tlamb@gansystems.com
www.gansystems.com

For press enquiries:
Nick Foot
PR Director
BWW Communications
Tel.: +44 1491-636393
nick.foot@bwwcomms.com
www.bwwcomms.com
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