N-Channel Power MOSFETs offer ultra-low on-resistance.
May 10, 2012 -
Featuring high-voltage stripe technology and currents from 3-36 A, D Series includes 400, 500, and 600 V MOSFETs with on-resistance down to 0.17, 0.13, and 0.34 W and gate charges down to 9, 6, and 45 nC, respectively. RoHS-compliant and halogen-free according to IEC 61249-2-21 definition, devices save energy in high-power switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, HID lighting, and induction heating.
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|Original Press release |
Vishay Intertechnology, Inc.
63 Lincoln Hwy., P.O. Box 4004
Malvern, PA, 19355 2143
Next-Generation 400 V, 500 V, and 600 V Vishay Siliconix N-Channel Power MOSFETs Offer Ultra-Low On-Resistance Down to 0.130 Ohm, FOM Down to 7.65 Ohm-nC, and Currents from 3 A to 36 A
D Series MOSFETs Feature High-Voltage Stripe Technology for New Levels of Efficiency and Power Density
MALVERN, Pa. - Vishay Intertechnology, Inc. (NYSE: VSH) today released the first devices in its next-generation D Series of high-voltage power MOSFETs. The new 400 V, 500 V, and 600 V n-channel devices combine low specific on-resistance with ultra-low gate charge and currents from 3 A to 36 A in a wide range of packages.
Based on a new high-voltage stripe technology, the D Series MOSFETs released today enable new levels of efficiency and power density. The devices' stripe design - with a smaller die size and terminations - lowers the total gate charge by 50 % compared with previous-generation solutions while increasing switching speed and reducing on-resistance and input capacitance.
The 400 V, 500 V, and 600 V devices feature on-resistance down to 0.17 W, 0.13 W, and 0.34 W, respectively. The ultra-low on-resistance values translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
With gate charges down to 9 nC for the 400 V devices, 6 nC for the 500 V devices, and 45 nC for the 600 V devices, the D Series MOSFETs offer best-in-class gate charge times on-resistance - a key figure of merit (FOM) for MOSFETs used in power conversion applications - down to 7.65 W-nC, 15.6 W-nC, and 12.3 W-nC, respectively.
The new D Series MOSFETs feature simple gate-drive circuitry and high body diode ruggedness, and they are easy to design into more compact, lighter, and cooler end products. The devices are RoHS-compliant, halogen-free according to the IEC 61249-2-21 definition, and avalanche (UIS)-rated for reliable operation.
Device Specification Table:
*Target specifications, product pending
Samples of the new D Series power MOSFETs are available now. Production quantities will be available in Q3 2012, with lead times of 12 to 16 weeks for larger orders. Pricing for U.S. delivery only starts at $2.28 per piece in 1,000-piece quantities. Follow Vishay power MOSFETs at http://twitter.com/vishayindust.
Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.