N-Channel Power MOSFETs feature military-grade design.
November 1, 2011 -
Housed in sealed TO-205AD packages, JAN-qualified 60 V Models 2N6660JANTX/JANTXV offer on-resistance of 1.3 W at 10 V, gate-source threshold voltage of 1.7 V, and switching speeds of 8 nsec, while 90 V Models 2N6661JANTX/JANTXV provide 3.6 W on-resistance at 10 V, gate-source threshold voltage of 1.6 V, and 6 nsec switching speed. Both feature input capacitance of 35 pF and are suited for military, space, and avionics applications.
Original Press release
Vishay Intertechnology, Inc.
63 Lincoln Hwy., P.O. Box 4004
Malvern, PA, 19355 2143
USA
Vishay Siliconix Introduces JAN-Qualified 60 V and 90 V N-Channel Power MOSFETs
for Military, Space, and Avionics Applications
Military-Grade Devices Offer Low On-Resistance and Fast Switching Speeds in Sealed TO-205AD Package
MALVERN, Pa. - Vishay Intertechnology, Inc. (NYSE: VSH) today introduced the first of its new Vishay Siliconix military-grade n-channel power MOSFETs: the JAN-qualified 60 V 2N6660JANTX/JANTXV and 90 V 2N6661JANTX/JANTXV. For military, space, and avionics applications, the devices combine low on-resistance and fast switching speeds in the sealed TO-205AD (TO-39) package.
The Vishay Siliconix facility in Santa Clara, Calif., has been re-qualified by DSCC to manufacture MOSFETs with screening to MIL-PRF-19500. The MIL-PRF-19500 specification is a standard that establishes the performance, quality, and reliability requirements for discrete components used in systems being built for military and critical avionic applications.
The devices released today are optimized for TTL/CMOS direct logic level interfaces; drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors; battery-operated systems; and solid-state relays. The MOSFETs' sealed TO-205AD package is designed to withstand the higher temperatures of military and aerospace applications.
The 60 V 2N6660JANTX/JANTXV offers low on-resistance of 1.3 W typical at 10 V, a low gate-source threshold voltage of 1.7 V, and fast switching speeds of 8 ns. The 90 V 2N6661JANTX/JANTXV provides low on-resistance of 3.6 W typical at 10 V, a low gate-source threshold voltage of 1.6 V, and fast switching speeds of 6 ns. Both devices feature low input and output leakage and provide low input capacitance of 35 pF typical.
The 2N6660ANTXV and 2N6661ANTXV feature a 100 % internal visual (pre-cap) inspection per MIL-PRF-19500. Vishay's additional hi-rel capabilities include Group A, Group B, Group C, and Group E testing, in addition to a lower-cost -2 flow option (MIL-STD-750 visual and processing).
Samples and production quantities of the JAN-qualified MOSFETs are available now, with lead times of 16 weeks for larger orders. Pricing for U.S. delivery starts at $125 per piece in 1,000-piece quantities for the 2N6660JANTX/JANTXV and $254 per piece for the 2N6661JANTX/JANTXV. Follow Vishay Siliconix power MOSFETs for military applications at http://twitter.com/vishayindust.
Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.
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