N-Channel Power MOSFETs feature low on-resistance.
May 9, 2012 -
Rated at 30 V, TrenchFET® Gen IV Series demonstrates extremely low RDS(on) values down to 1.0 mW at 10 V and 1.35 mW at 4.5 V. Models SiRA00DP, SiRA02DP, and SiRA04DP are housed in 6.15 x 5.15 mm PowerPAK SO-8 package, while Model SiSA04DN comes in 3.30 x 3.30 mm PowerPAK 1212-8 package. All devices offer low Qgd/Qgs ratio of 0.5 or less. Applications include high power density DC/DC converters, synchronous rectification, and synchronous buck converters.
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|Original Press release |
Vishay Intertechnology, Inc.
63 Lincoln Hwy., P.O. Box 4004
Malvern, PA, 19355 2143
Next-Generation TrenchFET Power MOSFETs Feature On-Resistance Down to 1.0 Milliohm at 10 V and 1.35 Milliohm at 4.5 V
New Family of Devices Offers Industry's Lowest On-Resistance at 4.5 V
MALVERN, Pa. - Vishay Intertechnology, Inc. (NYSE: VSH) today introduced the first devices in its next-generation TrenchFET® Gen IV family of 30 V n-channel power MOSFETs. Utilizing a new high-density design, the SiRA00DP, SiRA02DP, SiRA04DP, and SiSA04DN offer industry-low on-resistance down to 1.35 mW at 4.5 V and low Miller charge, Qgd, down to 1.8 nC in the PowerPAK® SO-8 and 1212-8 packages.
The new Vishay Siliconix TrenchFET IV power MOSFETs incorporate technological improvements in silicon design, wafer processing, and device packaging to deliver a number of benefits to designers of today's power electronics systems. With a reduction in on-resistance times silicon area of over 60 % compared with previous-generation devices, the SiRA00DP is able to demonstrate extremely low RDS(on) values of 1.0 mW at 10 V and an industry-best 1.35 mW at 4.5 V. For designers, the MOSFETs' low on-resistance translates into lower conduction losses for reduced power consumption and higher efficiency.
TrenchFET Gen IV MOSFETs offer a new structure that utilizes a very high-density design without significantly increasing the gate charge, overcoming a problem often associated with high cell count devices. The MOSFETs released today offer low total gate charge and therefore low on-resistance times gate charge figures of merit (FOM) down to 56 nC-W at 4.5 V for the SiRA04DP.
The SiRA00DP, SiRA02DP, and SiRA04DP provide increased system efficiency and lower temperatures in the 6.15 mm by 5.15 mm PowerPAK SO-8 package while the SiSA04DN offers similar efficiency with a third of the size in the 3.30 mm by 3.30 mm PowerPAK 1212-8 package. All of the devices released today offer a very low Qgd/Qgs ratio of 0.5 or less. This lower ratio can help to prevent shoot-thru by lowering gate-induced voltages.
The SiRA00DP, SiRA02DP, SiRA04DP, and SiSA04DN are optimized for high power density DC/DC converters, synchronous rectification, synchronous buck converters, and OR-ing applications. Typical end products include switch mode power supplies, voltage regulator modules (VRMs), POLs, telecom bricks, PCs, and servers.
The TrenchFET Gen IV devices are 100 % Rg- and UIS-tested. They are halogen-free according to the IEC 61249-2-21 definition and RoHS-compliant.
Complete details on all products in the TrenchFET Gen IV family are available here: http://www.vishay.com/mosfets/trenchfet-gen-iv/.
Vishay Siliconix was the industry's first supplier to introduce Trench power MOSFETs. The company's TrenchFET intellectual property includes numerous patents, including fundamental technology patents dating from the early 1980s. Each new generation of TrenchFET technology yields products that raise the bar for power MOSFET performance in a wide range of computing, communications, consumer electronics, and many other applications.
Device Specification Table:
Part # SiRA00DP SiRA02DP SiRA04DP SiSA04DN
VDS (V) 30 30 30 30
VGS (V) 20 20 20 20
RDS(ON) (W) max.
VGS = 10 V 0.00100 0.00200 0.00215 0.00215
VGS = 4.5 V 0.00135 0.00270 0.00310 0.00310
Qg (nC) VGS = 4.5 V 66.0 34.3 22.5 22.5
Qgs (nC) 26.0 13.6 8.6 8.6
Qds (nC) 8.6 4.1 4.0 4.0
Package PowerPAK SO-8 PowerPAK SO-8 PowerPAK SO-8 PowerPAK 1212-8
Samples of the TrenchFET Gen IV MOSFETs are available now. Production quantities will be available in Q1 2012 with lead times of 12 weeks for large orders. Pricing for U.S. delivery starts at $0.34 per piece in 100,000-piece quantities. Follow TrenchFET Gen IV power MOSFETs at http://twitter.com/vishayindust.
Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.
TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated