N-Channel Power MOSFETs feature low on-resistance.
July 30, 2010 -
Housed in TO-220, TO-220 FULLPAK, and D˛PAK TO-263 packages, respectively, 500 V/12 A Models SiHP12N50C-E3, SiHF12N50C-E3, and SiHB12N50C-E3 feature 0.555 W max on-resistance at 10 V gate drive and gate charge of 48 nC. RoHS-compliant devices help minimize conduction losses, saving energy in power factor correction boost circuits, PWM half bridges, and LLC topologies used in notebook computer AC adapters, PC and LCD TVs, and open-frame power supplies.
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Original Press release
Vishay Intertechnology, Inc.
63 Lincoln Hwy., P.O. Box 4004
Malvern, PA, 19355 2143
USA
New 500-V Vishay Siliconix N-Channel Power MOSFETs Feature Low 0.555-Ohm On-Resistance and Improved Gate Charge of 48 nC in TO-220,TO-220 FULLPAK, and D˛PAK Packages
MALVERN, PENNSYLVANIA - Vishay Intertechnology, Inc. (NYSE: VSH) today released three new 500-V, 12-A n-channel power MOSFETs with ultra-low 0.555-W maximum on-resistance at a 10-V gate drive, and an improved gate charge of 48 nC in TO-220, TO-220 FULLPAK, and D˛PAK (TO-263) packages.
The low on-resistance of the SiHP12N50C-E3 (TO-220), SiHF12N50C-E3 (TO-220 FULLPAK), and SiHB12N50C-E3 (D˛PAK) translates into lower conduction losses that save energy in power factor correction (PFC) boost circuits, pulsewidth modulation (PWM) half bridges, and LLC topologies in a wide range of applications, including notebook computer AC adapters, PC and LCD TVs, and open-frame power supplies.
In addition to their low on resistance, the devices feature a gate charge of 48 nC. Gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications, is a low 26.64 W-nC.
The new n-channel MOSFETs are produced using Vishay Planar Cell technology, which has been tailored to minimize on-state resistance and withstand high energy pulses in the avalanche and commutation mode. Compared to previous-generation MOSFETs, the SiHP12N50C-E3, SiHF12N50C-E3, and SiHB12N50C-E3 offer improved switching speed and losses.
The devices are compliant to RoHS Directive 2002/95/EC and 100 % avalanche- tested for reliable operation.
Samples and production quantities of the new power MOSFETs are available now, with lead times of 8 to 10 weeks for larger orders.
Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at http://www.vishay.com.
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