N-Channel Power MOSFET features on-resistance down to 9.4 mW.July 12, 2012 -
Model SiA436DJ, 8 V n-channel TrenchFET® power MOSFET offers on-resistance of 9.4 mW at 4.5 V, 10.5 mW at 2.5 V, 12.5 mW at 1.8 V, 18 mW at 1.5 V, and 36 mW at 1.2 V. Featuring PowerPAK® SC-70 2 x 2 mm package, it is suitable for load switching in portable electronics such as smartphones and tablet PCs. It is also compatible with low-voltage power rails in handheld devices. Product is halogen-free in accordance with IEC 61249-2-21 and is RoHS-compliant.
Original Press release
Vishay Intertechnology, Inc.
63 Lincoln Hwy., P.O. Box 4004
Malvern, PA, 19355 2143
USA
Vishay Siliconix 8 V N-Channel TrenchFET® Power MOSFET Offers Industry's Lowest on Resistance Down to 9.4 mW at 4.5 V in the 2 mm by 2 mm Footprint Area
New SiA436DJ Gives Designers On-Resistance Ratings at Gate-Source Voltages Down to 1.2 V
MALVERN, Pa. - Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 8 V n-channel TrenchFET® power MOSFET featuring the industry's lowest on-resistance for an n-channel device in the thermally enhanced PowerPAK® SC-70 2 mm by 2 mm footprint area.
The new SiA436DJ offers an ultra-low on-resistance of 9.4 mW at 4.5 V, 10.5 mW at 2.5 V, 12.5 mW at 1.8 V, 18 mW at 1.5 V, and 36 mW at 1.2 V. These values are up to 18 % lower than previous-generation solutions, and up to 64 % lower than the closest competing n-channel device in the 2 mm by 2 mm footprint area.
The SiA436DJ will be used for load switching in portable electronics such as smartphones and tablet PCs, as well as mobile computing applications. The device's ultra-compact PowerPAK SC-70 package saves PCB space in these applications while its low on-resistance translates into lower conduction losses for reduced power consumption and higher efficiency.
The MOSFET's on-resistance ratings down to 1.2 V simplify circuit design by allowing the MOSFET to work with the low-voltage power rails common in handheld devices, providing longer battery operation between charges. The SiA436DJ's low on-resistance also means a lower voltage drop across the load switch to prevent unwanted undervoltage lockout.
The SiA436DJ is 100 % Rg-tested, halogen-free in accordance with IEC 61249-2-21, and RoHS-compliant.
Samples and production quantities of the new SiA436DJ TrenchFET power MOSFET are available now, with lead times of 12 weeks for larger orders. Pricing for U.S. delivery in 100,000-piece quantities starts at $0.25 per piece in 100,000-piece quantities. Follow power MOSFETs from Vishay at http://twitter.com/vishayindust.
Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.
TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated.
Link to datasheet:
http://www.vishay.com/doc?63535 (SiA436DJ)
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