Mobile SDRAMs suit power sensitive applications.
March 12, 2010 -
Operating from 1.8 V, Mobile SDRAM family includes 32 Mb SDR Models IS42VM16200C and IS42VM32100C, organized as 2M x 16 and 1M x 32 respectively, and DDR Models IS43LR16200C and IS43LR32100C. Devices feature operating current of 50 mA, standby current in power down mode of 80 ľA, and deep power down mode current of 10 ľA. Available in commercial and industrial temperature ranges, units include Temperature Compensated Self Refresh and Partial Array Self Refresh.
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|Original Press release |
Integrated Silicon Solution, Inc. (ISSI)
1940 Zanker Road
San Jose, CA, 95112-4216
ISSI Announces 32Mb Ultra Low Power Mobile SDRAMs
Ideal for Power Sensitive Applications
SAN JOSE, Calif., -- Integrated Silicon Solution, Inc. (Nasdaq:ISSI), a leader in advanced memory solutions, today introduced the newest members of their ultra low power Mobile SDRAM family, the 32Mb SDR IS42VM16200C and the IS42VM32100C organized as 2Mx16 and 1Mx32 respectively and the DDR versions, the IS43LR16200C and the IS43LR32100C. These devices provide the lowest power consumption in the industry with an operating current of 50mA, standby current in power down mode of 80uA, and deep power down mode current of 10uA.
These devices have an operating voltage of 1.8V, a maximum speed of 166Mhz and are supported in BGA package and Known Good Die (KGD) options. Both commercial and industrial temperature ranges are offered. The 32Mb SDRAM devices add to ISSI's existing family of ultra low power Mobile SDRAMs that include 64Mb and 128Mb SDR SDRAMs, as well as 32Mb and 128Mb DDR SDRAMs. ISSI also offers a 16Mb SDR version as Known Good Die (KGD).
"ISSI's ultra low power Mobile SDRAMs provide the designer with the right density using ultra low power technology designed to maximize performance in power sensitive applications," said Ron Kalakuntala, ISSI vice president of marketing. "We will continue to expand this product line to provide our customers with the complete ultra low power Mobile SDRAM solution."
ISSI's ultra low power Mobile SDRAM products are ideal for applications where both high performance and low power consumption are important, including mobile applications like GPS/navigation systems, smart phones, digital cameras, EBook readers, small form factor displays, and gaming units. These devices include the following power saving features:
Temperature Compensated Self Refresh (TCSR): minimizes power consumption at lower temperatures.
Partial Array Self Refresh (PASR): eliminates unnecessary row activations.
Deep Power Down mode (DPD): provides a low power state when data retention is not required.
Samples of the new 32Mb ultra low power Mobile SDRAMs are available now with production quantities available in April. The 16Mb, 64Mb and 128Mb ultra low power Mobile SDRAMs are all available in production now.
ISSI is a fabless semiconductor company that designs and markets high performance integrated circuits for the following key markets: (i) digital consumer electronics, (ii) networking, (iii) mobile communications, (iv) automotive electronics, (v) industrial. The Company's primary products are high speed and low power SRAM and low and medium density DRAM. Through its Giantec business unit, the Company also designs and markets EEPROM, SmartCards and analog power management devices focused on its key markets. ISSI is headquartered in Silicon Valley with worldwide offices in Taiwan, China, Europe, Hong Kong, India, Korea, Singapore, and Japan. ISSI's web site is at www.issi.com.
Integrated Silicon Solution, Inc.