Microwave Transistor suits military applications.January 5, 2009 -
Consisting of single, unmatched GaN HEMT die, Series CGH40120F microwave transistor provides minimum of 120 W of saturated output power at 28 V, in compact, industry-standard, flanged ceramic-metal package. It is suited for general purpose military applications such as electronic warfare, tactical communications, radar, instrumentation, and direct video broadcast.
(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)
Original Press release
Cree, Inc.
4600 Silicon Dr
Durham, NC, 27703
USA
Cree Announces Sample Release of New, Highly-Efficient 120-watt GaN HEMT Microwave Transistor
DURHAM, N.C., DECEMBER 17, 2008 - Cree, Inc. (Nasdaq: CREE), announces the sample release of a highly efficient 120-watt GaN HEMT microwave transistor for general-purpose military and industrial applications such as electronic warfare, tactical communications, radar, instrumentation and direct video broadcast applications. This transistor provides outstanding RF power performance over wide instantaneous bandwidths compared to other technologies such as GaAs MESFET or Si LDMOSFET.
The new transistor, CGH40120F, consists of a single, unmatched GaN HEMT die providing a minimum of 120 watts of saturated output power at 28 volts, in a small, industry-standard, flanged ceramic-metal package. The exceptional performance of the transistor has been demonstrated in a number of amplifier applications, including a 1200 to 1400-MHz instantaneous-bandwidth reference amplifier that offers greater than 18 dB typical small-signal gain, 100 watts typical CW output power, and typical power-added efficiencies of 75 percent across the entire band. Similar amplifiers have also been demonstrated over the 800 to 1300-MHz frequency range with output powers greater than 90 watts at efficiencies greater than 65 percent.
"The CGH40120F is an important addition to our general-purpose GaN HEMT product family. This part has been engineered for use in a wide variety of applications, including high-efficiency pulsed modes with duty cycles extending to CW operation. The remarkable power and efficiency of this product can positively impact system thermal design, cooling costs, and DC power distribution for current and next-generation systems," said Jim Milligan, director of RF and microwave products at Cree.
The CGH40120F complements Cree's broadband GaN HEMT general-purpose microwave transistors now available at power levels of 10W, 25W, 35W, 45W and 90W.
About Cree
Cree is leading the LED lighting revolution and setting the stage to obsolete the incandescent light bulb through the use of energy-efficient, environmentally friendly LED lighting. Cree is a market-leading innovator of lighting-class LEDs, LED lighting solutions, and semiconductor solutions for wireless and power applications.
Cree's product families include recessed LED down lights, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, power-switching devices and radio-frequency/wireless devices. Cree solutions are driving improvements in applications such as general illumination, backlighting, electronic signs and signals, variable-speed motors, and wireless communications.
For additional product and company information, please refer to www.cree.com
|
|
|
|
|
|
|
| 
