MOSFETs (500 V) offer low conduction and switching losses.
Press Release Summary:
Built on second-generation Super Junction Technology, Vishay Siliconix SiHx25N50E MOSFETs comprise 25 A, RoHS-compliant devices that offer gate charge of 57 nC and 145 mΩ on-resistance. These values promote energy conservation in high-power, high-performance consumer products, lighting applications, and ATX/silver box PC SMPSs. Package options include TO-220, TO-247AC, and thin leaded TO-220 FULLPAK. Products withstand high energy pulses in avalanche and commutation modes.
Original Press Release:
Vishay Intertechnology Announces Its First 500 V High-Voltage MOSFETs Built on E Series Super Junction Technology
Offering Same Benefits as E Series 600 V and 650 V MOSFETs, New Devices Deliver High Efficiency and Power Density
MALVERN, Pa. – Vishay Intertechnology, Inc. (NYSE: VSH) today announced the first MOSFETs in a new 500 V family that features the same benefits of low conduction and switching losses as the company's 600 V and 650 V E Series devices. The low on-resistance and gate charge of the new devices will play a key role in saving energy in high-power, high-performance consumer products, lighting applications, and ATX/silver box PC switch mode power supplies (SMPS).
Built on second-generation Super Junction Technology, the new Vishay Siliconix SiHx25N50E 500 V MOSFETs provide a high-efficiency complement to Vishay's existing 500 V D Series components based on high-performance planar technology. The 25 A devices feature low on-resistance of 145 mΩ in a variety of package options, including the TO-220 (SiHP25N50E), TO-247AC (SiHG25N50E), and the thin leaded TO-220 FULLPAK (SiHA25N50E), which offers a low profile optimized for slim consumer products.
The new MOSFETs provide ultra-low gate charge of 57 nC and low gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications. As in Vishay's 600 V and 650 V E Series devices, the low on-resistance and optimized switching speed of the 500 V technology can increase efficiency and power density in power factor correction (PFC), two-switch forward converter, and flyback converter applications.
The RoHS-compliant devices are designed to withstand high energy pulses in the avalanche and commutation modes with guaranteed limits through 100 % UIS testing.
Device Specification Table:
Device | ID (A) @ 25 °C | RDS(on) (mΩ) @ 10 V (maximum) | QG (nC) @ 10 V (typical) | Package |
SiHG25N50E | 25 | 145 | 57 | TO-247AC |
SiHP25N50E | 25 | 145 | 57 | TO-220 |
SiHA25N50E | 25 | 145 | 57 | Thin lead TO-220 FULLPAK |
Samples and production quantities of the 500 V SiHP25N50E, SiHG25N50E, and SiHA25N50E power MOSFETs are available now, with lead times of 16 to 17 weeks. Pricing for U.S. delivery only starts at $2.25 per piece for 1,000-piece orders.
Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.
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