Low-Profile SiC MOSFET Modules have multiple circuit topologies.
Press Release Summary:
Split dual SiC MOSFET Modules QJD1210010 and QJD1210011 feature multiple circuit topologies, including independent, dual, in parallel, common collector, and common emitter. Designed for use in high-frequency applications, products are rated at 100 A/1,200 V, have -175°C junction temperature, and isolated baseplate of copper or AlSiC. Both modules include 2 MOSFET Silicon Carbide transistors, each with reverse-connected Zero Recovery® free-wheel silicon carbide Schottky diode.
Original Press Release:
Low-Profile SiC MOSFET Modules Featuring Multiple Circuit Topologies Available from Powerex (www.pwrx.com)
Product Description - Created with a low profile and multiple circuit topologies, including independent; dual; in parallel; common collector; and common emitter, two new Powerex split dual SiC MOSFET Modules (QJD1210010 and QJD1210011) are designed for use in high frequency applications.
Each module consists of two MOSFET Silicon Carbide transistors, with each transistor having a reverse-connected Zero Recovery® free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management
Product Ratings and Characteristics -Rated at 100A/1200V, QJD1210010 and QJD1210011 feature:
Applications -These MOSFET modules can be used in various high frequency applications, including:
Availability -
QJD1210010 can be purchased at sample pricing at $3,055 each. QJD1210011 can be purchased at sample pricing at $3,175 each.
For more information, contact Kelly Bandieramonte kbandieramonte@pwrx.com.
*Zero Recovery is a registered trademark of Cree, Inc.
