Low Noise Amplifiers offer optimal IP3 headroom.
August 11, 2008 -
Drawing 425 mA from 12 V supply, Models JCA02-4000, JCA24-4001, and JCA48-4000 feature frequency bands of 0.5-2, 2-4, and 4-8 GHz, respectively. Units offer noise figures under 2 dB up through C-Band, output P1dB levels of +24 dBm, and output IP3 headroom levels of 15 dB or greater above output P1dB compression point. In addition, LNAs deliver saturated output power levels approaching +27 dBm, I/O return loss of 11 dB min across operating bandwidth, and signal gain of 35 dB or more.
(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)
Original Press release
Endwave Corporation
130 Baytech Drive
San Jose,, CA, 95134
USA
High-Linearity Broadband LNAs Offer Exceptional IP3 Headroom
SAN JOSE, CA-July 30, 2008-Endwave Corporation (NASDAQ: ENWV), a provider of high-frequency RF modules for telecommunications networks, defense electronics and homeland security systems, has announced the release of three new high-linearity broadband low noise amplifiers which preserve signal purity by minimizing the non linear contributions. These amplifiers simultaneously achieve several high performance characteristics in a unique wideband design, and are available in three frequency bands of 0.5 to 2 GHz (JCA02-4000), 2 to 4 GHz (JCA24-4001), and 4 to 8 GHz (JCA48-4000). They feature noise figures of under 2 dB up through C-Band, output P1dB levels of +24 dBm, and output IP3 headroom levels of 15 dB or greater above the output P1dB compression point. In addition, units deliver saturated output power levels approaching +27 dBm, have excellent I/O return loss of 11 dB min across the entire operating bandwidth, and provide signal gain of 35 dB or more. They deliver stable performance over a temperature range of -54º to + 85 ºC and draw just 425 mA of current from a standard 12 Volt supply. With the addition of a low drop out voltage regulator, customers may run these components on as little as 8 Volts DC for lower power dissipation applications.
These amplifiers are manufactured using stringent Design for Manufacturability (DFM) techniques, and are produced with high-precision automated assembly equipment to ensure repeatability. As such, they are often delivered in gain/phase matched sets, making them ideal for applications that require unit-to-unit repeatability such as phased array radar.
"We find that system designers are increasingly challenged to provide broadband performance without sacrificing key parameters such as noise figure, linearity, or return loss. Our amplifier design was created to simultaneously meet several of the design challenges with a single amplifier solution," said Hung Nguyen, Sr. Design Engineer at Endwave. "Typical design challenges were overcome through careful selection of the transistor epi and gate peripheries, and a systematic analysis of non-linear contributions throughout the entire module component chain. We supplemented this approach by back-fitting with actual laboratory measurements of linearity and distortion to further improve our design."
At the design stage, optimizing the impedance matching and bias of each of the active elements for top linearity, and carefully sequencing successively larger active elements, result in superior amplifier module performance.
The amplifiers are available with a variety of options including: variable gain control; I/O isolators, input limiters, limiting amplifiers, TTL switches, phase tracking, low phase noise, temperature compensation, detector outputs, and bias-T outputs. They are available in hermetic packages with a variety of connector options, including K, SMA, and GPO connectors.
About Endwave
Endwave Corporation designs, manufactures, and markets RF modules that enable the transmission, reception, and processing of high-frequency signals in wireless telecommunications networks, defense electronics, and homeland security systems. The company's RF modules consist of microwave components and subsystems, including integrated transceivers, amplifiers (low-noise, medium-power, high-power, gain blocks, low-phase noise, limiting, and logarithmic), frequency multipliers, up and down converters, oscillators, synthesizers, microwave switch arrays, and other custom multi-function assemblies (MFAs). Endwave has 43 issued patents covering its core technologies including semiconductor and proprietary circuit designs. Corporate headquarters are located in San Jose, CA, with other operations in Diamond Springs, CA; El Dorado Hills, CA; Andover, MA; and Chiang Mai, Thailand.
Company Contact:
Mark Hebeisen
Endwave Corporation
mark.hebeisen@endwave.com
978-686-4400 x105
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