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Isolated Gate Driver targets SiC and Si power switches.

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Press Release Summary:

January 13, 2014 - With high temperature capability up to 225°C, HADES® Gen2 Chipset can be located next to power switches, minimizing parasitic inductances and their negative impact on efficiency. Increased switching frequencies translate into reduction of size and weight of passive and magnetic components, while faster switching times lead to maximum energy efficiency of converters or motor drivers.

Cissoid

Rue Emile Francqui, 3, Mont Saint Guibert, 1435, Belgium

Original Press Release

CISSOID Unveils HADES® Gen2, a Highly Integrated 225°C Isolated Gate Driver for SiC and Si Power Switches

Press release date: January 8, 2014

Mont-Saint-Guibert, Belgium – CISSOID, the leader in high-temperature and extended lifetime semiconductor solutions, unveils its 2nd generation of HADES®, the high-reliability, high voltage isolated gate driver chipset. HADES® drives both high efficiency Silicon Carbide (SiC) and traditional silicon power switches.

HADES® Gen2 is aiming at four key objectives:
-       Maximizing the benefits of the newest Silicon Carbide (SiC) power switches: Increased switching frequencies translate into dramatic reduction of the size & weight of the passive & magnetic components; while faster switching times lead to increased energy efficiency of the converters or motor drivers;
-       High temperature capability of HADES® allows to locate the driver next to the power switches, hence minimizing parasitic inductances and their negative impact on efficiency;
-       Addressing the distinct needs of very high-temperature applications (e.g.  225°C normal operation), as well as of lower temperatures (100~175°C) together with unrivalled silicon lifetime (different temperature flavours will be available to address distinct needs);
-       Bringing the highest integration level for miniaturization of the gate driver function, enabling turnkey gate driver modules and Intelligent Power Modules.

HADES is poised to outperform any gate driver solution on the market for all these merit factors. It has been optimized to meet the requirements of large-volume, cost sensitive applications, including industrial and automotive, for any system running above 100°C.

HADES® Gen2 integrated circuits will remain backward compatible with the former generation of HADES (CISSOID’s current reference design based on their THEMIS, ATLAS and RHEA chips). This second generation will provide a more integrated solution, resulting in a dramatic improvement of compactness. Special attention has been brought to support of a wide range of SiC power switches currently available, including MOSFETs, JFETs and BJTs.

Tony Denayer, CEO at CISSOID explained: “In 2011, we were first on the market with HADESÒ, the first isolated gate driver solution dedicated to Silicon carbide (SiC) fast-switching power devices. Market acceptance has been tremendous and a number of customers addressing a large span of applications did validate their design at technology level with our chipset. For their large-scale deployments, they are now expecting us to come up with a more integrated version for use into hybrid modules or traditional PCB final designs. HADES V2 will be introduced by mid-2014: It will dramatically reduce the number of chips in a full 1200V half bridge topology, while bringing ultimate reliability”. Mr Denayer added “For example a motor drive inverter with a mission profile up to 125°C will reach an expected lifetime of 30 years and more – figures that cannot be achieved with traditional solutions today”. 

CISSOID will use the HADES V2 chipset to offer a turnkey module version of its gate driver in a reliable hermetic module that will greatly facilitate implementations of power converters with 225°C rating.

An Advanced Feature Set of HADES Gen2 is available from CISSOID under Non Disclosure Agreement. For more information, contact one of the company's representatives at www.cissoid.com/company/about-us/contacts.html.

About Cissoid - www.cissoid.com
CISSOID is the leader in high temperature semiconductor solutions, delivering standard products and custom solutions for power management, power conversion and signal conditioning in extreme temperature and harsh environments. CISSOID provides high reliability products guaranteed from -55°C to +225°C and commonly used outside that range, from cryogenic lows to upper extremes.

Whether the ambient temperature is low but the power dissipation heats up the chips, or in high temperature environments, CISSOID products enable energy, weight and cost savings in lighter, cooling-free and more compact electronic systems. They are used in mission-critical systems as well as in applications requiring long term reliability. CISSOID supplies leaders in the Oil&Gas, Aeronautics, Industrial and Automotive markets.

Press Contact:
Dave Hutton
E-mail : dave.hutton@cissoid.com
Tel.: +32 10 48 92 10

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