Integrated, ISM-Focused Power MOSFET delivers up to 1.4 kW.
June 7, 2012 -
Suited for use in RF generators for industrial, scientific, and medical (ISM) applications, DRF1400 integrates RF gate drivers, high breakdown voltage (500 V) MOSFETs, and associated bypass capacitors in one package. Half-bridge topology delivers efficiency exceeding 92% at 1 kW, while parasitic capacitance and inductance levels - coupled with Schmitt trigger input, Kelvin signal ground, anti-ring function, invert and non-invert select pin - promote stability and control.
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|Original Press release |
2381 Morse Ave.
Irvine, CA, 92614
Microsemi Expands RF Power MOSFET Products Offering
DRF1400 Integrates Drive and RF Power MOSFETs in a Half-bridge Topology
ALISO VIEJO, Calif. -- Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today strengthened its RF power product line with the introduction of the DRF1400 power MOSFET. It is well-suited for use in RF generators for a wide range of industrial, scientific and medical (ISM) applications including plasma generation for semiconductors, LCD and solar cell manufacturing, and CO2 lasers operating up to 30 megahertz (MHz.)
Microsemi's DRF family of products integrates RF gate drivers, power MOSFETs and associated bypass capacitors in a single highly thermal performance package. The DRF1400 is a half-bridge topology and it is the first device of its type in the company's DRF family to deliver efficiency of greater than 92 percent at 1 kilowatt (kW). In addition, the low parasitic capacitance and inductance, coupled with the Schmitt trigger input, Kelvin signal ground, anti-ring function, invert and non-invert select pin, provide improved stability and control in kW to multi-kilowatt, high frequency ISM applications. The high level of integration also allows the product to reduce bill-of-material component counts and costs. Additional features include:
-- Integrated RF drivers for simplified driver stage design, allowing simple logic signals at input;
-- Internal bypass capacitors for reduced parasitic inductance and most stable supply voltages;
-- High breakdown voltage (500V) MOSFETs, enabling higher power output per half-bridge; and
-- High thermal performance proprietary package capable of delivering up to 1.4 kW of power.
Engineering samples of the DRF1400 are available now. An associated DRF1400 reference design kit (13.56 MHz, Class-D half bridge) is also available for purchase from Microsemi. This reference design includes all of the necessary hardware to quickly launch >1kW of RF power. A design guide is also available (http://www.microsemi.com/en/sites/default/files/datasheets/1817%20B.pdf) which covers the basics of operation and design consideration for RF system designers.
For more information, view the DRF1400 data sheet at http://www.microsemi.com/en/fulltext-search/drf1400 or contact Microsemi via email at email@example.com.
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense and security, aerospace, as well as industrial and medical markets. Products include mixed-signal integrated circuits, SoCs and ASICS; programmable logic solutions; power management products; timing and voice processing devices; RF solutions; discrete components; and Power-over-Ethernet ICs and midspans. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,000 employees globally. Learn more at www.microsemi.com.
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