Infrared Emitters have peak wavelength of 850 nm.

Press Release Summary:




Based on gallium aluminum arsenide (GaAlAs) technology, OD-250 delivers uniform optical beam and has total output of 250 mW (typ) and min output of 160 mW. Spectral bandwidth is 40 nm at 50%, with half intensity beam angle at 110°. Suited for imaging in military and security applications, emitter features metal surfaces that are gold-plated and 4 wire bonds on die corners for redundancy. Standard 3-lead TO-39 package can be stored/operated in temperatures from -40 to 100°C.



Original Press Release:



Opto Diode's New Ultra-High Optical Output IR Emitters



Newbury Park, CA - Opto Diode (www.optodiode.com), a division of ITW, and a member of the ITW Photonics Group, announces the third in the family of three super-high-power infrared (IR) emitters. Based on gallium aluminum arsenide (GaAlAs) technology, the new OD-250 features a wide angle, very uniform optical beam with ultra high optical output. Total power output is 250mW (typical) with a minimum output at 160 mW. Peak emission wavelength is 850nm, making this IR emitter ideal for imaging in military and security applications.

The new device has a spectral bandwidth of 40 nm at 50 percent with a half intensity beam angle at 110 degrees. The OD-250 is highly durable; metal surfaces are gold-plated and there are four wire bonds on die corners for redundancy. The standard, 3-lead TO-39 package can be stored and/or operated in extreme temperatures ranging from -40 degrees C to 100 degrees C, (maximum junction temperature at 100 degrees C). The new IR emitters feature rise times of 20 nsec and fall times of 20 nsec. They are designed for use in night vision (NV) imaging technology, such as night vision cameras and/or goggles, and for integration into illuminators and markers. For more information about Opto Diode's OD-250 super-high-power infrared emitters, please visit: http://www.optodiode.com/pdf/OD-250.pdf.

Opto Diode Corporation (www.optodiode.com) based in Newbury Park, California, is a member of the ITW Photonics Group, delivering high-performance, standard and custom photodetectors, and reliable, high quality, standard and custom infraredand visible LEDs. The company, with the recent acquisition of International Radiation Detectors, also designs and manufactures semiconductor radiation devices that detect photons in the UV range, X-rays, and other high energy particles. The domestic U. S. manufacturing plant includes a wafer fab and ensures delivery of volume quantities at competitive prices with short lead times. Opto Diode's rigorous quality control standards meet their customer's strictest requirements in a variety of industries, including test & measurement, biotechnology, medical, entertainment, military/defense, industrial, aerospace, automotive, R&D and more.

About ITW Photonics Group: ITW, a diversified manufacturer of advanced industrial technology, has brought together three of its photonics business units to form the ITW Photonics Group. The ITW Photonics Group was created to bring together and build on the technical expertise of three individual companies that specialize in photonics technology and span the full spectrum of wavelengths. The group consists of Lumex (LED and LCD technology, headquarters in Palatine, IL and Taiwan), Cal Sensors (IR detector and emitter technology, based in Santa Rosa, CA) and Opto Diode (LED, silicon photodiodes and electro-optical assembly technology, based in Newbury Park, CA).

The synergy of these industry frontrunners provides an unsurpassed range of photonic capabilities within a broad spectrum of markets, including medical, military and industrial controls. The ITW Photonics Group provides integrated solutions that encompass the technology and experience from all three business units, offering design engineers higher product performance with greater feature enhancements. For more information on the ITW Photonics Group, log onto www.itwphotonicsgroup.com.

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