High-Voltage CMOS Technology targets power grid applications.October 24, 2011 -
Built on 0.35 µm High-Voltage CMOS technology, inter-metal dioxide (IMD) layers enhances galvanic isolation to over 600+ Vrms. Process lets designers forego optocoupler and directly integrate 2 individual ICs within one package for complex analog/mixed signal applications to achieve synchronized performance for information exchange as long as one IC has special IMD layers. Isolated communications may be based on inductive coupling between 2 coils or capacitive coupling of 2 capacitors.
Original Press release
austriamicrosystems AG
Tobelbaderstrasse 30
Schloss Premstaetten, , A 8141
Austria
Austriamicrosystems Further Extends Its Leading Edge High-Voltage CMOS Technology towards Power Grid Applications
Galvanic isolation exceeding several hundred volts between separate metal layers can be securely achieved utilizing austriamicrosystems' latest H35 process extension
Unterpremstaetten, Austria - austriamicrosystems' (SIX: AMS) Full Service Foundry business unit today announced at the GSA (Global Semiconductor Alliance) Semiconductor Ecosystems Summit a further extension of its 0.35 µm High-Voltage CMOS technology portfolio. By introducing special inter-metal dioxide (IMD) layers, galvanic isolation is significantly improved to over several hundred volts.
In an increasing number of complex analog/mixed-signal applications, such as switching-mode-power-supplies (SMPS) and motor drivers, two individual ICs must operate together, even though they operate at significantly different voltage levels. In order to achieve synchronized performance, isolated communication between these two isolated ICs is required to enable the exchange of information. At present, isolation is often achieved with an optocoupler placed between the two communicating circuits. The newly developed galvanic isolation process allows the designer to skip the optocoupler and directly integrate the communicating circuits within one single package (i.e. dual-die solution), as long as one IC features austriamicrosystems' special IMD layers.
"Our new IMD layers allow us to achieve isolation voltage ratings beyond 600 Vrms", says Dr. Martin Schrems, Director of Process Development & Implementation at austriamicrosystems. "We've derived these ratings without changing our standard bill of materials, which is established in our leading edge 0.35 µm High-Voltage CMOS process, but instead utilized a low stress oxide that gives us the required IMD thickness. Foundry customers are welcome to develop their dual-die solutions utilizing the isolation capabilities of our new H35B4V1 process."
"Having developed 6 generations of High-Voltage CMOS processes, the extension of our leading edge H35 specialty process towards voltages beyond 200 V is a logical step in our continuous efforts to deliver best-in-class analog foundry services and technologies to our customers," states Thomas Riener, Senior Vice President and General Manager of austriamicrosystems' Full Service Foundry business unit. "As most advanced High-Voltage CMOS manufacturers, we want to offer our customers the possibility to expand their product portfolio towards motor controllers and power grid applications, which certainly constitute an attractive market due to worldwide sustainability initiatives."
Isolated communications may either be based on inductive coupling between two coils or on capacitive coupling of two capacitors. In both cases the isolation rating is determined by the metal layers being used to form these passive elements. If ultra-high isolation levels (>1000 V) are needed, an isolation cascade may be considered using IMD isolation on both dies constituting the integrated system.
austriamicrosystems' galvanic isolation process H35B4V1 is now included in the analog/mixed signal high performance process design kit ("HIT-Kit").
Read more details about this new HIT-Kit version on our Foundry Support Server at http://asic.austriamicrosystems.com/hitkit or contact foundry@austriamicrosystems.com for getting access to Design Rules and Process Parameters documents.
About austriamicrosystems
austriamicrosystems' business unit Full Service Foundry has successfully positioned itself in the analog/mixed-signal foundry market offering well-established RF CMOS, High-Voltage CMOS, BiCMOS, SiGe-BiCMOS and embedded EEPROM processes. With superior support during the design phase, high-end tools and experienced engineers, austriamicrosystems succeeds to be an attractive analog foundry partner especially for fabless design houses.
austriamicrosystems is a leading designer and manufacturer of high performance analog ICs, combining almost 30 years of analog design know-how with state-of-the-art manufacturing and test facilities and production partnerships. austriamicrosystems leverages its expertise in low power and high accuracy to provide industry-leading standard and customized analog products. Operating worldwide with more than 1,200 employees, austriamicrosystems focuses on the areas of power management, sensors & sensor interfaces and mobile infotainment in its markets Consumer & Communications, Industry & Medical and Automotive. Through the merger with TAOS, a world leader in advanced light sensors, austriamicrosystems has expanded its innovative sensor offering for growth markets such as mobile devices. austriamicrosystems is listed on the SIX Swiss Exchange in Zurich (ticker: AMS). For more information, please visit www.austriamicrosystems.com
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