ThomasNet Home   |   Promote Your Business
Home  |   My ThomasNet News®  |   Industry Market Trends  |   Submit Release  |   Advertise  |   About Us Feb 14, 2012  

High Frequency Amplifiers come in 3 x 3 mm QFN package.

Print | 
Email |  Comment   Share  
June 11, 2009 - Based upon GaAs pseudomorphic high electron mobility transistor technology, Models SUF-1033, -5033, and -8533 offer multiple high-frequency gain blocks featuring various gain levels across bandwidth. Each packaged broadband amplifier also features single supply voltage, low gain variation vs. temperature, and 50 W I/O match. With frequency ranges of DC-18 GHz, 0.1-4 GHz, and DC-12 GHz, units are suited for commercial, military, and space applications.

(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)
Original Press release

RF Micro Devices, Inc.
7628 Thorndike Rd.
Greensboro, NC, 27409-9421
USA



RFMD® Expands Family of Packaged Broadband High Frequency Amplifiers


New Components Expand RFMD's Product Portfolio Targeting Commercial, Military and Space Applications

BOSTON, June 9, 2009 - IEEE MTT-S -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today announced the addition of three new packaged broadband GaAs pHEMT high frequency amplifiers to RFMD's SUF family of products. The new amplifiers deliver exceptional broadband frequency performance and are applicable for commercial, military and space applications.

Based upon GaAs pseudomorphic high electron mobility transistor (pHEMT) technology, the SUF-1033, -5033, and -8533 packaged broadband amplifiers broaden the SUF family's range of performance by offering multiple high-frequency gain blocks featuring various gain levels across bandwidth in small 3 x 3 mm QFN packaged solutions. Each packaged broadband amplifier also features a single supply voltage, low gain variation versus temperature, and 50 ohm I/O match, all of which promote ease of design for global customers. With the expansion of RFMD's SUF family of products, customers across multiple markets can simplify their supply base by selecting amplifiers from a diverse high-performance portfolio.

Jeff Shealy, VP and general manager of RFMD's Defense and Power business unit, said, "We are very pleased to offer customers in the commercial, military, and space markets these three new SUF amplifiers delivering excellent frequency performance and gain across bandwidth in size-reduced 3 x 3 mm package solutions. In the near-term, we anticipate significant customer interest for this family of SUF broadband amplifiers targeting wideband gain blocks for military and space applications, high IP3 RF drivers, LO and IF mixer applications, and broadband test and instrumentation equipment."

The SUF-1033, -5033 and -8533 are packaged versions of die-level amplifiers released by RFMD in the second half of calendar 2008. Supporting both die- and package-level products allows maximum flexibility for customers focused on multi-chip integration as well as radio board development.

Technical features of the featured SUF products include:

                             SUF-1033    SUF-5033     SUF-8533
Frequency Range DC-18 GHz 0.1-4 GHz DC-12 GHz
P1dB (@ mid band) 14 dBm 22 dBm 16 dBm
Small Signal Gain(@mid band) 10 dB 20 dB 15 dB
OIP3 (@ 10GHz) 24 dBm 29 dBm 25 dBm
NF (@ 10GHz) 4.8 dB 3.0 dB 4.2 dB
Supply Voltage 5V 5V w/ 5V w/
dropping dropping
resistor resistor
Supply Current 47mA 90mA 58mA
Availability


Samples of the SUF-1033, -5033 and 8533 broadband packaged amplifiers are available immediately and product revenue is expected in the September 2009 quarter.

RFMD is exhibiting at the IEEE MTT-S International Microwave Symposium 2009, June 9-11, at the Boston Convention and Exhibition Center, Boston, MA, in Booth 2412.

About RFMD

RF Micro Devices, Inc. (Nasdaq:RFMD) is a global leader in the design and manufacture of high-performance semiconductor components. RFMD's products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.

Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD's web site at www.rfmd.com.

RF MICRO DEVICES(R) and RFMD(R) are trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective owners.
Print | 
Email |  Comment   Share  
Contacts: View detailed contact information.


 

Post a comment about this story

Name:
E-mail:
(your e-mail address will not be posted)
Comment title:
Comment:
To submit comment, enter the security code shown below and press 'Post Comment'.
 



 See related product stories
More .....
 Newsletters
Industry Market Trends
Has Got It
  • Latest developments
  • Trends
  • Best practices
  • Opinions & Commentary
Get Ahead. Get IMT.
Subscribe Free Today
Subscribe   View Sample

Your Gateway to a Fast Changing World
Product News Alerts
Receive similar stories and other customized news to keep you in the know on the products shaping industry.
Subscribe Free Today
Subscribe   View Sample
 See more product news in:
Electronic Components and Devices
 More New Product News from this company:
Voltage Controlled Attenuators target wireless and wired markets.
Point-to-Point Radio Chipsets target cellular backhaul market.
HSPA+ Power Amplifiers support 48-51% peak efficiencies.
Power Amplifier IC serves global wireless applications.
RF Power Transistor supports Green architecture.
More ....
 Other News from this company:
RFMD® Announces Availability of New pHEMT Process Technologies for Foundry Customers
RFMD® Arms Popular Mobile Devices with Leading WiFi Connectivity Solutions
RFMD® Selected to Enable LG's Next-Generation 3G/4G Smartphones
RFMD® Unveils Portfolio of Cellular Front End Modules for 3G/4G Switch and Signal Conditioning Applications
Samsung Selects RFMD® to Power Galaxy Smartphone and Tablet Family
More ....
 Tools for you
Watch Company 
View Company Profile
Company web site
More news from this company
E-Mail Story
Save Story
Search for suppliers of
Gallium Arsenide (GaAs) Field-Effect Transistor (FET) Amplifiers
Broadband Amplifiers
Join the forum discussion at:
Wired In


Home  |  My ThomasNet News®  |  Industry Market Trends  |  Submit Release  |  Advertise  |  Contact News  |  About Us
Brought to you by Thomasnet.com        Browse ThomasNet Directory

Copyright © 2012 Thomas Publishing Company
Terms of Use - Privacy Policy