Product News: Electronic Components & Devices, Electrical Equipment & Systems

Half-Bridge Gate Driver IC features programmable dead time.

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Press Release Summary:

January 24, 2014 - Available in 14-pin SOIC and 14-lead DIP packages, IX21844 can drive – in half-bridge, full-bridge, and 3-phase configurations – discrete power MOSFETs and IGBTs that operate up to 600 V. Both high and low side outputs feature integrated power DMOS transistors, each capable of sourcing 1.4 A and sinking 1.8 A gate drive current. Absolute maximum rating of 700 V provides additional margin for high-voltage applications. Programmable dead time can be set between 400 nsec and 5 µsec.

IXYS Integrated Circuits Division

145 Columbia, Aliso Viejo, CA, 92656, USA

Original Press Release

IXYS Integrated Circuits Division Announces New 700V Half-Bridge Gate Driver with Programmable Dead Time

Press release date: January 16, 2014

IX21844 Drives Both High Side and Low Side MOSFETs and IGBTs

Beverly, Massachusetts, USA – IXYS Integrated Circuits Division (ICD), Inc., a wholly owned subsidiary of IXYS Corporation (NASDAQ: IXYS), announced the immediate availability of the IX21844 Half Bridge Gate Driver IC.  The IX21844 is a high voltage IC that can drive discrete power MOSFETs and IGBTs that operate up to 600V.  Both the high side and low side outputs feature integrated power DMOS transistors, each capable of sourcing 1.4A and sinking 1.8A of gate drive current.  The IX21844's 700V absolute maximum rating provides additional margin for high voltage applications

The IX21844 is manufactured on IXYS ICD's advanced HVIC Silicon on Insulator (SOI) process, making the IX21844 extremely robust, and virtually immune to negative transients and high dV/dt noise.

The inputs are 3.3V and 5V logic compatible.  Internal under voltage lockout circuitry for both the high side and low side outputs does not allow the IX21844 to turn-on the discrete power transistors until there is sufficient gate voltage.  A programmable dead time can be set between 400ns and 5µs to insure that both the high-side and low-side power MOSFET or IGBT are not enabled at the same time.  The output propagation delays are matched for use in high frequency applications.

The IX21844 can drive power discrete MOSFETs and IGBTs in half-bridge, full-bridge, and 3-phase configurations.  Typical applications include motor drives, high voltage inverters, uninterrupted power supplies (UPS), and DC/DC converters.  The IX21844 complements IXYS ICD's extensive low side gate driver and optically isolated gate driver portfolios, and the full range of IXYS power semiconductors.

This IX21844 is available in production quantities in 14-pin SOIC (IX21844N) and 14-lead DIP (IX21844G) packages.

Pricing and Availability

The IX21844 is available in production quantities. Pricing for OEM quantities of 50KU is $0.86.

About IXYS Integrated Circuits Division and IXYS Corporation

IXYS Integrated Circuits Division, (ICD), a leader in the design and manufacture of solid state relays and high voltage integrated circuits, is a wholly owned subsidiary of IXYS Corporation. IXYS Corporation develops and markets primarily high performance power semiconductor devices that are used in controlling and converting electrical power efficiently in power systems for the telecommunication and internet infrastructure, motor drives, medical systems and transportation. IXYS also serves its markets with a combination of digital and analog integrated circuits, power systems and RF GaAs and GaN based products. Additional information about IXYS Integrated Circuits Division, Zilog and IXYS may be found at www.ixysic.com, www.zilog.com and www.ixys.com.

http://www.ixysic.com/home/pdfs.nsf/www/IX21844.pdf/$file/IX21844.pdf

Catherine Austin
IXYS Integrated Circuits Division (formerly Clare)
Product Marketing Manager

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