GaN HEMT is intended for WiMAX applications.October 23, 2006 -
Model CGH27015 15 W packaged gallium nitride high electron mobility transistor (GaN HEMT) produces 2.5 W of average output power and 24% drain efficiency over frequency range of 2.3-2.9 GHz. Device features 14.5 dB of small signal gain, and 2% error vector magnitude (EVM) under orthogonal frequency-division multiplexing (OFDM) modulation when operated at 28 V.
(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)
Original Press release
Cree, Inc.
4600 Silicon Dr
Durham, NC, 27703
USA
New Cree GaN HEMT Optimized for North American WiMAX Applications
BOSTON, MA, OCT. 9, 2006 - Cree, Inc. (NASDAQ: CREE), announced today in conjunction with the 2006 WiMAX World Conference and Exposition being held in Boston, Massachusetts, that it is shipping sample quantities of its new 15-watt packaged gallium nitride (GaN) high electron mobility transistor (HEMT), the CGH27015. Optimized for high efficiency, high gain and wide bandwidth, Cree's CGH27015 is designed to provide exceptional linear power and efficiency for North American WiMAX and broadband wireless access applications operating between 2.3 GHz and 2.9 GHz.
The CGH27015 typically produces 2.5 watts of average output power and 24-percent drain efficiency over the frequency range of 2.3 GHz to 2.9 GHz. This represents up to 30-percent improvement in device efficiency when compared with traditional technologies such as silicon LDMOS or GaAs under WiMAX signals and requirements (802.16-2004). It also features 14.5 dB of small signal gain and 2-percent error vector magnitude (EVM) under orthogonal frequency-division multiplexing (OFDM) modulation when operated at 28 volts.
"The release of the CGH27015 demonstrates Cree's continued commitment to provide a comprehensive line of high-performance GaN RF products for the WiMAX and broadband wireless access markets," said Jim Milligan, Cree product manager for wide bandgap radio frequency products. "GaN is an ideal material for applications that operate under high-power conditions and must meet high efficiency and stringent linearity requirements, like WiMAX and other applications operating between 2.5 and 6 GHz."
Additional information about the CGH27015 may be obtained by calling Cree at 919-287-7505 or visiting www.cree.com.
About WiMAX
WiMAX is a standards-based wireless technology that provides high-throughput connections over long distances. It can be used for multiple applications, including last-mile broadband access, hotspots, cellular backhaul, high-speed enterprise connectivity, and non-line-of-sight mobile connectivity.
About Cree, Inc.
Cree is a market-leading innovator and manufacturer of semiconductors and devices that enhance the value of solid-state lighting, power and communications products by significantly increasing their energy performance and efficiency. Key to Cree's market advantage is its world-class materials expertise in silicon carbide (SiC) and gallium nitride (GaN) for chips and packaged devices that can handle more power in a smaller space while producing less heat than other available technologies, materials and products.
Cree drives its increased performance technology into multiple applications including exciting alternatives in brighter and more-tunable light for general illumination, backlighting for more-vivid displays, optimized power management for high-current, switch-mode power supplies and variable-speed motors, and more-effective wireless infrastructure for data and voice communications. Cree customers range from innovative lighting-fixture makers to defense-related federal agencies.
Cree's product families include blue and green LED chips, lighting LEDs, LED backlighting solutions, power-switching devices and radio-frequency/wireless devices. For additional product specifications please refer to www.cree.com.
Contact:
Deb Lovig
Marketing Communications Manager
Ph: 919-287-7505
Fax: 919-313-5943
Email: Deb_Lovig@cree.com
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