GaN Amplifier Modules are designed for CATV applications.July 3, 2008 -
Suited for use as power doubler amplifiers in line amplification and HFC optical nodes, Models D10040200PH1 and D10040230PH1 feature 20 and 23 dB of gain, respectively. Available in industry-standard SOT115J module package, both utilize ultra-linear, high-efficiency GaN process technology, and feature +24 Vdc supply voltage and maximum CTB of -74 dBc and CSO of -68 dBc. Model D10040200PH1 has CIN of 65 dB minimum, while D10040230PH1 has 63 dB minimum.
(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)
Original Press release
RF Micro Devices, Inc.
7628 Thorndike Rd.
Greensboro, NC, 27409-9421
USA
RFMD® Releases Industry's First GaN CATV Amplifier Modules
GaN Amplifiers Deliver Unmatched Performance And Design Flexibility
GREENSBORO, N.C., June 25 -- RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance radio frequency systems and solutions, today released the industry's first gallium nitride (GaN) based CATV amplifier modules. The D10040200PH1 and D10040230PH1 are designed for use as power doubler amplifiers in current and next generation CATV infrastructure applications, including line amplification and hybrid fiber coaxial (HFC) optical nodes.
The D10040200PH1 and D10040230PH1 feature 20 dB and 23 dB of gain, respectively, and are the first power doubler amplifier modules to utilize an ultra-linear, high-efficiency GaN process technology. By combining multiple compound semiconductor technologies in a highly integrated, hybrid amplifier module RFMD® designers are able to produce unmatched performance across all critical multi-carrier distortion parameters while also increasing output power capability and efficiency. With this unique blend of performance attributes, the D10040200PH1 and D10040230PH1 deliver significant improvements over competing devices in all key parameters and provide the utmost in design flexibility -- all while maintaining the ease of use CATV infrastructure original equipment manufacturers (OEMs) have come to expect from industry-standard SOT115J packaged amplifier modules.
As an example, CATV infrastructure designers can utilize either the D10040200PH1 or D10040230PH1 in HFC optical nodes to increase final power output by 2 to 3 dBmV over competing devices while maintaining equivalent multi-carrier distortion performance, in particular Carrier to Intermodulation Noise (CIN) levels. Alternatively, when best-in-class CIN performance is desired, RF output drive level may be reduced with minimal external tuning -- easing implementation for equipment OEMs.
RFMD's innovative implementation of GaN in this new generation of CATV amplifier modules dramatically improves CIN performance at an opportune time in the CATV market, said Alastair Upton, general manager of RFMD's Broadband and Consumer Business Unit. As multiple system operators (MSOs) increase digitally modulated transmissions over their CATV infrastructure and continue to implement fiber deep programs, the low distortion and high output power of these breakthrough products enable OEMs to better service the demand for higher-performance CATV infrastructure equipment.
Technical features of the D10040200PH1 and D10040230PH1 include:
o +24 Vdc supply voltage
o Industry-standard SOT115J module package
o No external input/output matching with minimal external support components
o Maximum CTB of -74 dBc and CSO of -68 dBc
o Industry-leading CIN of 65 dB minimum for the D10040200PH1 and 63 dB minimum for the D10040230PH1
Production quantities of D10040200PH1 and D10040230PH1 are available immediately and based on design win activity RFMD anticipates shipments will commence within the current calendar year. For more information about RFMD's power doublers and other CATV products please see rfmd.com/broadbandcatv. Specific test parameters and other information about the D10040200PH1 and D10040230PH1 are available at the following URL: rfmd.com/powerdoublers
About RFMD RF Micro Devices (Nasdaq: RFMD) is a global leader in the design and manufacture of high-performance radio frequency systems and solutions. RFMD's cellular front ends, cellular transceivers, RF components and system- on-chip (SoC) solutions enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, cellular base station, wireless local area network (WLAN), CATV networking, aerospace, defense, and global positioning systems (GPS) markets. Recognized for its diverse portfolio of state-of-the-art semiconductor technologies and vast RF systems expertise, RFMD is a preferred supplier to the world's leading mobile device and RF equipment manufacturers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001- certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD's website at www.rfmd.com.
SOURCE RF Micro Devices, Inc.
CONTACT:
Jerry Neal,
Executive Vice President,
1-336-678-7001
Web site: http://www.rfmd.com
http://rfmd.com/broadbandcatv
http://rfmd.com/powerdoublers (RFMD)
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