Foundry Service adds integrated passive device process technology. .July 9, 2010 -
Building upon HighQ(TM) copper on silicon integrated passive device (IPD) technology, HighQ IPD2 process utilizes 8 in. wafer technology and features second 5 µm copper layer that promotes inductor performance and flexibility. It supports design of precise IPDs for RF system in package applications in portable electronics equipment. Typical designs include baluns, low pass filters, band pass filters, and diplexers used in portable and wireless applications.
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Original Press release
ON Semiconductor, LLC
5005 E. McDowell Rd.
Phoenix, AZ, 85008
USA
ON Semiconductor Launches IPD2 Process Technology that Combines HighQ(TM) Performance and Small Size for Portable Electronics Applications
Advanced copper on silicon process supported by design tools and rapid prototyping allows fast development of cost-effective RF front-end products
IEEE MTT-S International Microwave Symposium (IMS), Anaheim, CA, Booth # 2733 - ON Semiconductor (Nasdaq: ONNN) a premier supplier of high performance, energy efficient silicon solutions for green electronics introduced a new integrated passive device (IPD) process technology. An enhancement of the company's existing HighQ(TM) copper (Cu) on silicon (Si) IPD technology, the new IPD2 process features a second 5um copper layer that increases inductor performance, allows greater flexibility, and supports the design of highly precise, cost-effective IPDs for RF system in package applications in portable electronics equipment.
One of a number of innovative manufacturing services offered by ON Semiconductor's custom Foundry Division, the HighQ(TM) IPD2 process utilizes advanced 8-inch wafer technology. Typical designs include baluns, low pass filters, band pass filters and diplexers used in the latest portable and wireless applications. Here, IPD2-based designs provide important benefits for circuit designers including reduced cost, reduced thickness, small footprint, and higher performance that equates to longer battery life.
ON Semiconductor offers fully featured design tools and design support plus rapid prototyping capabilities for its IPD2 process technology. These enable potential users to quickly and cost-effectively assess whether their less sophisticated discrete or integrated PCB solutions, thicker, more costly ceramic solutions, or more expensive Gold (Au) on Gallium Arsenide (GaAs) based IPDs are suitable for conversion.
"Integrating passive devices on a cost-effective, small-size platform with low insertion losses can provide a valuable solution for designers of battery powered portable electronics" said Rick Whitcomb, senior director, Custom Foundry Division, ON Semiconductor. "By supporting the new process with a comprehensive set of design tools and technical assistance, we can help customers make the transition from less effective technologies to our IPD2 process in the minimum time and with maximum confidence."
For more information, please visit http://www.onsemi.com.
About ON Semiconductor
ON Semiconductor (Nasdaq: ONNN) is a premier supplier of high performance, energy efficient, silicon solutions for green electronics. The company's broad portfolio of power and signal management, logic, discrete and custom devices helps customers efficiently solve their design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power applications. ON Semiconductor operates a world-class, value-added supply chain and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions. For more information, visit http://www.onsemi.com.
ON Semiconductor and the ON Semiconductor logo are registered trademarks of Semiconductor Components Industries, LLC. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders. Although the company references its Web site in this news release, such information on the Web site is not to be incorporated herein.
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