Product News: Computer Hardware & Peripherals
FRAM device facilitates low power computing.
Press Release Summary:
January 13, 2012 - Manufactured on low-power 130 nm CMOS manufacturing process, FM25V20, 2 MB serial F-RAM (ferroelectric random access memory) device includes serial I2C, serial SPI, and parallel memories. It features wide voltage operation of 2.0-3.6 V, standby current of 100 µA, and sleep mode current of 3 µA. FM25V20 features 100-trillion read/write cycles and is designed for applications including industrial controls, metering, medical, military, gaming, and computing applications.
Original Press Release
Ramtron Announces 2-Megabit Serial Nonvolatile F-RAM Memory
Press release date: January 9, 2012
COLORADO SPRINGS, CO - Ramtron International Corporation (Nasdaq: RMTR), the leading developer and supplier of nonvolatile ferroelectric random access memory (F-RAM) and integrated semiconductor products, today announced the FM25V20, a 2-megabit (Mb) high performance serial F-RAM device. The FM25V20 is a member of Ramtron's V-Family of F-RAM products, which offers a wide operating voltage range of 2.0 to 3.6-volts. The FM25V20 features fast access, NoDelay(TM) writes, virtually unlimited read/write cycles (1e14), and low power consumption. The latest F-RAM device is a drop-in replacement for 2-Mb serial Flash and serial EEPROM memories in a broad number of applications including industrial controls, metering, medical, military, gaming, and computing applications.
"The FM25V20 provides more nonvolatile memory capacity for demanding data collection applications as well as an easy upgrade path to higher densities for our current V-Family F-RAM customers," said Ramtron marketing manager, Craig Taylor. "The expansion of our V-Family product line supports our on-going initiative to provide low energy and high data integrity memory solutions that eliminate the complexities, overhead, and system level reliability issues often encountered with other nonvolatile memories."
About the FM25V20
The FM25V20 employs an advanced ferroelectric process that yields virtually unlimited endurance of 100-trillion (1e14) read/write cycles and reliable data retention for 10 years. The FM25V20 uses a fast serial peripheral interface (SPI), operating up to full bus speed of 40MHz frequency. The low power operation features a wide-voltage operation of 2.0V to 3.6V, a typical standby current of 100µA, and a sleep mode current of 3µA. A read-only Device ID feature, standard on the serial V-Family devices, allows the host to determine the manufacturer, product density, and product revision. The FM25V20 operates over an industrial temperature range of -40°C to +85°C and is available in standard "Green"/RoHS-compliant 8-pin EIAJ SOIC and 8-pin TDFN packages.
About the F-RAM V-Family
Manufactured on a low-power 130nm CMOS manufacturing process, the Ramtron V-Family of F-RAM products includes serial I2C, serial SPI, and parallel memories. The full V-Family line of F-RAM products includes the following devices:
V-Family Serial I2C F-RAM
V-Family Serial SPI F-RAM
V-Family Parallel F-RAM
Pricing and Availability
The FM25V20 is sampling now in 8-pin EIAJ SOIC and TDFN packages. Pricing starts at $8.99 for 10,000-piece quantities.
Ramtron International Corporation, headquartered in Colorado Springs, Colorado, is a fabless semiconductor company that designs, develops and markets specialized semiconductor memory and integrated semiconductor solutions used in a wide range of product applications and markets worldwide. For more information, visit www.ramtron.com.
For a 300-dpi product photo, visit www.ramtron.com/press-center/image-bank.aspx (see F-RAM V-Family).