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FRAM IC has wide voltage range, high-speed read/write cycle.

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November 9, 2012 - Available in 3.9 x 5.05 mm and 5.30 x 5.24 mm SOP-8 packages, MB85RC256V operates from 2.7–5.5 V, offers non-volatile data memory capacity of 256 Kb with configurations of 32k x 8 bits, and provides 1012 times read/write cycle capability. IC retains data for up to 10 years at industrial temperature ranges and supports 2-wire serial bus transmission protocol (I˛C) with frequencies up to 1 MHz (operating from 4.5–5.5 V) and 400 kHz (from 2.7–4.5 V).

Fujitsu Introduces New FRAM Featuring Wide Voltage Ranges, Low Power, Maximum Read/Write Capacity

(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)

Fujitsu Semiconductor Europe GmbH
Pittlerstrasse 47
Langen, D-63225

Press release date: October 25, 2012

MB85RC256V is the Latest Member of Expanding V Series of Fujitsu FRAMs for Advanced Industrial Applications

SUNNYVALE, Calif. -- Fujitsu Semiconductor America (FSA) today introduced a new Ferroelectric Random Access Memory (FRAM) device that operates from 2.7V to 5.5V, providing non-volatile data memory with high-speed read/write access times and low power consumption for products that require a wide voltage range.

The MB85RC256V is the latest addition to the growing family of Fujitsu V Series FRAM ICs, which provide memory capacities of 4Kbit, 16Kbit, 64Kbit and 256Kbit. FRAM combines the non-volatile data memory characteristics of ROM with the speed advantages of RAM. The new MB85RC256V features memory capacity of 256Kb with configurations of 32k x 8 bits, 10(12) times read/write cycle capability, and 10 years of data retention at industrial temperature ranges. The IC supports a 2-wire serial bus transmission protocol (I(2)C) with frequencies up to 1MHz (when operating between 4.5V and 5.5V) and frequencies of 400kHz (when operating between 2.7V and 4.5V).

Optimal Read/Write Access, High Endurance, Low Power

The MB85RC256V and other Fujitsu FRAMs deliver much faster read/write access, higher endurance and lower power consumption than conventional EEPROM and Flash memory. These outstanding features make FRAM suitable for a variety of advanced applications such as metering, industrial control, medical and healthcare electronics, and financial point-of-sale systems. With in-house development and manufacturing, Fujitsu is able to deliver high-quality products with a stable supply chain.


The new FRAM is available now in two varieties of SOP-8 packages (3.9mm x 5.05mm and 5.30mm x 5.24mm) to support different layout design requirements. These two package options are pin-compatible with other common memories available today, making it easy to replace existing sockets.

For more details about Fujitsu's leading-edge FRAM ICs visit

High-resolution Images

About Fujitsu Semiconductor America, Inc.

Fujitsu Semiconductor America, Inc. (FSA) is a leading designer and developer of innovative semiconductor products and solutions for new generations of consumer, communications, automotive and industrial products. FSA provides a comprehensive portfolio of high-quality, reliable semiconductor products and services throughout North and South America. Founded in 1979 and headquartered in Sunnyvale, California, Fujitsu Semiconductor America (formerly Fujitsu Microelectronics America) is a wholly owned subsidiary of Fujitsu Semiconductor Limited (FSL), Japan.

For product information, visit the company's website at, e-mail or call 1-800-866-8608. For company news and updates, connect with FSA on Twitter (, Facebook (, or YouTube (

All product names mentioned herein are trademarks or registered trademarks of their respective owners. Information provided in this press release is accurate at time of publication and subject to change without advance notice.

CONTACT: Steven Wolpern, Fujitsu Semiconductor America, Inc., +1-408-737-5625,; Dick Davies, IPRA, 1-415-652-7515,
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