FET is suited for use as buffer amplifier.August 18, 2008 -
Operating at 12 GHz from 3 V supply, NE3515S02 Hetero-Junction FET delivers P1 dB of +14 dBm with 14 dB linear gain while maintaining noise figure less than 0.5 dB, typ. Designed for DBS LNBs and high dynamic range front end applications, unit is housed in RoHS-compliant S02, hollow plastic surface-mount package with footprint of 3.2 x 3.2 mm that features recessed leads for low inductance.
(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)
Original Press release
California Eastern Laboratories
4590 Patrick Henry Dr.
Santa Clara, CA, 95054
USA
New NEC HJ FET Sets New Standard for Power, Gain and Low Noise Performance
Santa Clara, CA - July 18, 2008 - Here's good news for designers working in the X and Ku bands. NEC's new NE3515S02 Hetero-Junction FET is ideal for use as a buffer amplifier in applications like DBS LNBs and high dynamic range front ends. At 12GHz and a supply voltage of just 3V, the NE3515S02 delivers a P1dB of +14dBm with 14dB Linear Gain - all while maintaining a Noise Figure under 0.5dB (typ).
Available now from CEL, the NE3515S02 is housed in NEC's RoHS-compliant S02 package. This hollow plastic surface-mount package has an overall footprint of just 3.2 x 3.2 mm and features recessed leads for lower inductance and improved performance. In stock and available now, the NE3515S02 is currently priced at 99¢ in 10K quantities.
Readers call your local CEL Sales office, numbers are listed at www.cel.com
For more information, please visit www.cel.com
California Eastern Laboratories is the authorized North American source for NEC RF, Wireless and Optoelectronic semiconductor products
California Eastern Laboratories
4590 Patrick Henry Drive P.O. Box 54964 Santa Clara, CA 95054-1817 408-988-3500 FAX 408-988-0279
|
|
|
|
|
|
|
| 
