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Dual N-Channel Power MOSFETs suit automotive applications.

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Dual N-Channel Power MOSFETs suit automotive applications.
Dual N-Channel Power MOSFETs suit automotive applications.

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December 13, 2013 - Supplied in 5 x 6 mm asymmetric PowerPAK® SO-8L package, 40 V Siliconix SQJ940EP and SQJ942EP combine both high- and low-side MOSFETs required for synchronous DC/DC buck converters. At 10 V, Model SQJ940EP offers max on-resistance of 6.4 mΩ for Channel 2 low-side MOSFET and 16 mΩ for Channel 1 high-side MOSFET, while Model SQJ942EP offers max on-resistance of 11 mΩ for low-side MOSFET and 22 mΩ for high-side MOSFET. Both TrenchFET® devices are AEC-Q101-qualified and operate up to +175°C.
Original Press Release

63 Lincoln Hwy., P.O. Box 4004
Malvern, PA, 19355

Vishay Intertechnology Offers AEC-Q101-Qualified Asymmetric PowerPAK® SO-8L Package for Dual TrenchFET® MOSFETs

Asymmetric Package Optimizes Low-Side MOSFET RDS(on) and Saves Space in Synchronous DC/DC Converters

MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today launched two new AEC-Q101-qualified, 40 V, dual n-channel TrenchFET® power MOSFETs in the asymmetric PowerPAK® SO-8L package. For automotive applications, the Vishay Siliconix SQJ940EP and SQJ942EP combine both high- and low-side MOSFETs required for high-efficiency synchronous DC/DC buck converters in one compact 5 mm by 6 mm package, saving space compared to using discrete MOSFETs while offering a low-side maximum on-resistance down to 6.4 mΩ.

Among the industry's first automotive-qualified dual MOSFETs in an asymmetric package, where the size of the low-side MOSFET is increased for lower conduction losses, the MOSFETs released today offer high-temperature operation to +175 °C to provide the ruggedness and reliability required for applications anywhere inside vehicles. The devices are particularly well suited to vehicle telematics, such as the radio and GPS systems.

The SQJ940EP and SQJ942EP offer designers a choice of different on-resistance values. At the 10 V rating, the SQJ940EP offers low maximum on-resistance of 6.4 mΩ for the Channel 2 low-side MOSFET and 16 mΩ for the Channel 1 high-side MOSFET. Compared with dual symmetrical solutions, the SQJ940EP offers 31 % lower low-side on-resistance while still maintaining a compact outline. The SQJ942EP offers maximum on-resistance of 11 mΩ at 10 V for the low-side MOSFET and 22 mΩ for the high-side MOSFET.

100 % Rg- and UIS-tested, the MOSFETs are RoHS-compliant and halogen-free.

Device Specification Table:
Part # SQJ940EP SQJ942EP
Channel 1 2 1 2
VDS (V) 40 40
VGS (V) ± 20 ± 20
Max. RDS(ON) (mΩ) @   10 V 16 18.5 6.4 7.6 22 26 11 13
4.5 V


Samples and production quantities of the SQJ940EP and SQJ942EP are available now, with lead times of 14 to 16 weeks for larger orders. Pricing for U.S. delivery only starts at $0.24 per piece in 100,000-piece quantities.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at

TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated.
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